전자부품 데이터시트 검색엔진 |
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ISL3282EMRTEP-TK 데이터시트(PDF) 8 Page - Intersil Corporation |
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ISL3282EMRTEP-TK 데이터시트(HTML) 8 Page - Intersil Corporation |
8 / 8 page ISL3282EMRTEP 8 Intersil products are manufactured, assembled and tested utilizing ISO9000 quality systems as noted in the quality certifications found at www.intersil.com/design/quality Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see www.intersil.com FN7595.1 February 15, 2011 For additional products, see www.intersil.com/product_tree Products Intersil Corporation is a leader in the design and manufacture of high-performance analog semiconductors. The Company's products address some of the industry's fastest growing markets, such as, flat panel displays, cell phones, handheld products, and notebooks. Intersil's product families address power management and analog signal processing functions. Go to www.intersil.com/products for a complete list of Intersil product families. *For a complete listing of Applications, Related Documentation and Related Parts, please see the respective device information page on intersil.com: ISL3282EMRTEP To report errors or suggestions for this datasheet, please go to www.intersil.com/askourstaff FITs are available from our website at: http://rel.intersil.com/reports/sear FIGURE 16. RECEIVER WAVEFORMS Die Characteristics SUBSTRATE AND TDFN THERMAL PAD POTENTIAL (POWERED UP): GND TRANSISTOR COUNT: 140 PROCESS: Si Gate BiCMOS Typical Performance Curves C L = 15pF, TA = +25°C; Unless Otherwise Specified. (Continued) TIME (20ns/DIV) 2.0 -2.0 0 0 1.0 A - B 2.0 3.0 4.0 VL = 1.5V VL = 2.5V VL = 3.3V VCC = 3.3V Revision History The revision history provided is for informational purposes only and is believed to be accurate, but not warranted. Please go to web to make sure you have the latest Rev. DATE REVISION CHANGE 1/27/11 FN7595.1 In Figure 4 on page 6, corrected units of y axis from mA to µA. 2/26/10 FN7595.0 Initial Release. |
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유사한 설명 - ISL3282EMRTEP-TK |
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