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ISL3282EMRTEP-TK 데이터시트(PDF) 8 Page - Intersil Corporation

부품명 ISL3282EMRTEP-TK
상세설명  RS-485/RS-422 Receiver
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제조업체  INTERSIL [Intersil Corporation]
홈페이지  http://www.intersil.com/cda/home
Logo INTERSIL - Intersil Corporation

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ISL3282EMRTEP
8
Intersil products are manufactured, assembled and tested utilizing ISO9000 quality systems as noted
in the quality certifications found at www.intersil.com/design/quality
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time
without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be
accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third
parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see www.intersil.com
FN7595.1
February 15, 2011
For additional products, see www.intersil.com/product_tree
Products
Intersil Corporation is a leader in the design and manufacture of high-performance analog semiconductors. The Company's products
address some of the industry's fastest growing markets, such as, flat panel displays, cell phones, handheld products, and notebooks.
Intersil's product families address power management and analog signal processing functions. Go to www.intersil.com/products for a
complete list of Intersil product families.
*For a complete listing of Applications, Related Documentation and Related Parts, please see the respective device information page
on intersil.com: ISL3282EMRTEP
To report errors or suggestions for this datasheet, please go to www.intersil.com/askourstaff
FITs are available from our website at: http://rel.intersil.com/reports/sear
FIGURE 16. RECEIVER WAVEFORMS
Die Characteristics
SUBSTRATE AND TDFN THERMAL PAD POTENTIAL
(POWERED UP):
GND
TRANSISTOR COUNT:
140
PROCESS:
Si Gate BiCMOS
Typical Performance Curves C
L = 15pF, TA = +25°C; Unless Otherwise Specified. (Continued)
TIME (20ns/DIV)
2.0
-2.0
0
0
1.0
A - B
2.0
3.0
4.0
VL = 1.5V
VL = 2.5V
VL = 3.3V
VCC = 3.3V
Revision History
The revision history provided is for informational purposes only and is believed to be accurate, but not warranted. Please go to web to make
sure you have the latest Rev.
DATE
REVISION
CHANGE
1/27/11
FN7595.1
In Figure 4 on page 6, corrected units of y axis from mA to µA.
2/26/10
FN7595.0
Initial Release.


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