IRLHS6242PBF datasheet(5/9 Pages) IRF

부품명	IRLHS6242PBF

상세설명	HEXFET Power MOSFET

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제조업체	IRF [International Rectifier]

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IRLHS6242PbF

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5

Fig 13. Typical On-Resistance vs. Drain Current

Fig 12. On-Resistance vs. Gate Voltage

Fig 15. Typical Power vs. Time

Fig 14. Maximum Avalanche Energy vs. Drain Current

Fig 16.

Peak Diode Recovery dv/dt Test Circuit for N-Channel

HEXFET® Power MOSFETs

CircuitLayoutConsiderations

• Low Stray Inductance

• Ground Plane

• Low Leakage Inductance

Current Transformer

P.W.

Period

di/dt

Diode Recovery

dv/dt

Ripple

≤ 5%

Body Diode

Forward Drop

Re-Applied

Voltage

Reverse

Recovery

Current

Body Diode Forward

Current

VGS=10V

VDD

ISD

Driver Gate Drive

D.U.T. ISD Waveform

D.U.T. VDS Waveform

Inductor Curent

D =

P.W.

Period

* VGS = 5V for Logic Level Devices

*

+

-

+

-

RG

VDD

• dv/dt controlled by RG

• Driver same type as D.U.T.

• ISD controlled by Duty Factor "D"

• D.U.T. - Device Under Test

D.U.T

25

50

75

100

125

150

Starting TJ , Junction Temperature (°C)

0

10

20

30

40

50

60

70

ID

TOP

2.2A

4.3A

BOTTOM 8.5A

1E-5

1E-4

1E-3

1E-2

1E-1

1E+0

Time (sec)

0

100

200

300

400

500

600

0

2

4

6

8

10

12

14

16

VGS, Gate -to -Source Voltage (V)

5

10

15

20

25

ID = 8.5A

TJ = 125°C

TJ = 25°C

0

10

20

30

40

50

60

70

ID, Drain Current (A)

5

10

15

20

25

30

35

Vgs = 2.5V

Vgs = 4.5V

유사한 부품 번호 - IRLHS6242PBF

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