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2SCR523EB 데이터시트(PDF) 1 Page - Rohm |
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1 / 3 page 1/2 www.rohm.com ○ c 2009 ROHM Co., Ltd. All rights reserved. 2010.09 - Rev.A General purpose transistor(50V,0.1A) 2SCR523M / 2SCR523EB / 2SCR523UB Structure Dimensions (Unit : mm) NPN silicon epitaxial planar transistor Features 1) Complements the 2SAR523M / 2SAR523EB / 2SAR523UB. Applications Switch, LED driver Packaging specifications Packaging Type Code Taping Basic ordering unit (pieces) T2L 8000 Taping TL 3000 Taping TL 3000 2SCR523M 2SCR523EB 2SCR523UB Package VMT3 EMT3F UMT3F Type Absolute maximum ratings (Ta=25 C) Inner circuit Symbol Limits Unit VCBO 50 V 50 V V VCEO VEBO 5 mA 200 IC ICP mA 100 Tj 150 °C Tstg −55 to +150 °C PD 200 150 mW mW ∗1 ∗2 Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Junction temperature Range of storage temperature Power dissipation ∗1 Pw=1mS Single pulse ∗2 Each terminal mounted on a recommended land Parameter 2SCR523M,2SCR523EB 2SCR523UB Electrical characteristics (Ta=25 C) Parameter Symbol Min. Typ. Max. Unit Conditions BVCEO BVCBO BVEBO ICBO IEBO VCE(sat) fT Cob 50 50 5 − − − − − − − − − − 350 0.10 1.6 − − − 0.1 0.1 0.30 − − V V V μA μA V MHz pF IC =50μA IC =1mA IE =50μA VCB =50V VEB =5V IC =50mA, IB=5mA hFE 120 − 560 − VCE =10V, IE=−10mA, f=100MHz VCE =6V, IC=1mA VCB =10V, IE=0A, f=1MHz Output capacitance Transition frequency Collector-emitter saturation voltage Emitter cut-off current Collector cut-off current Emitter-base breakdown voltage Collector-emitter breakdown voltage Collector-base breakdown voltage DC current gain VMT3 EMT3F (1) (2) (3) UMT3F 2.0 0.32 0.65 0.65 1.3 (1) (2) (3) 0.9 0.13 Abbreviated symbol : NB Abbreviated symbol : NB Abbreviated symbol : NB (1) (3) (2) (1) Base (2) Emitter (3) Collector |
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