전자부품 데이터시트 검색엔진 |
|
BA6950FS 데이터시트(PDF) 9 Page - Rohm |
|
BA6950FS 데이터시트(HTML) 9 Page - Rohm |
9 / 11 page Technical Note 9/10 BA6950FS, BA6951FS www.rohm.com 2011.05 - Rev.C © 2011 ROHM Co., Ltd. All rights reserved. 13) Regarding the input pin of the IC This monolithic IC contains P+ isolation and P substrate layers between adjacent elements, in order to keep them isolated. P-N junctions are formed at the intersection of these P layers with the N layers of other elements, creating a parasitic diode or transistor. For example, the relation between each potential is as follows: When GND > Pin A and GND > Pin B, the P-N junction operates as a parasitic diode. When GND > Pin B, the P-N junction operates as a parasitic transistor. Parasitic diodes inevitably occur in the structure of the IC. The operation of parasitic diodes can result in mutual interference among circuits, as well as operating malfunctions and physical damage. Therefore, do not use methods by which parasitic diodes operate, such as applying a voltage lower than the GND (P substrate) voltage to an input pin. Parasitic element Appendix: Example of monolithic IC structure Resistor Transistor (NPN) N N N P + P + P P substrate GND Parasitic element Pin A N N P + P + P P substrate GND Parasitic element Pin B C B E N GND Pin A Pin B Other adjacent elements E B C GND Parasitic element |
유사한 부품 번호 - BA6950FS_11 |
|
유사한 설명 - BA6950FS_11 |
|
|
링크 URL |
개인정보취급방침 |
ALLDATASHEET.CO.KR |
ALLDATASHEET 가 귀하에 도움이 되셨나요? [ DONATE ] |
Alldatasheet는? | 광고문의 | 운영자에게 연락하기 | 개인정보취급방침 | 링크교환 | 제조사별 검색 All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |