SILICON PLANAR EPITAXIAL

PNP TRANSISTOR

2N3799X

Semelab Limited

Semelab Limited

Semelab Limited

Semelab Limited

Coventry Road, Lutterworth, Leicestershire, LE17 4JB

Telephone +44 (0) 1455 556565

Fax +44 (0) 1455 552612

Document Number 8240

Issue 1

Page 2 of 3

Symbols

Parameters

Test Conditions

Min.

Typ

Max.

Units

V(BR)CEO

(1)

Collector-Emitter

Breakdown Voltage

IC = -10mA

IB = 0

-60

V(BR)CBO

Collector-Base

Breakdown Voltage

IC = -10µA

IE = 0

-50

V(BR)EBO

Emitter-Base Breakdown

Voltage

IE = -10µA

IC = 0

-5

V

VCB = -50V

IE = 0

-0.01

ICBO

Collector Cut-Off Current

TA = 150°C

-10

µA

IEBO

Emitter Cut-Off Current

VEB = -4V

IC = 0

-20

nA

IC = -100µA

IB = -10µA

-0.2

VCE(sat)

(1)

Collector-Emitter Saturation

Voltage

IC = -1.0mA

IB = -100µA

-0.25

IC = -100µA

IB = -10µA

-0.7

VBE(sat)

(1)

Base-Emitter Saturation

Voltage

IC = -1.0mA

IB = -100µA

-0.8

VBE(on)

Base-Emitter On Voltage

IC = -100µA

VCE = -5V

-0.7

V

IC = -1.0µA

VCE = -5V

75

IC = -10µA

VCE = -5V

225

IC = -100µA

VCE = -5V

300

TA = -55°C

150

IC = -500µA

VCE = -5V

300

IC = -1.0mA

VCE = -5V

300

hFE

(1)

Forward-current transfer

ratio

IC = -10mA

VCE = -5V

250

Notes

Notes

Notes

Notes

(1)

Pulse Width ≤ 300us, δ ≤ 2%