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TPD4E001DCKR 데이터시트(PDF) 3 Page - Texas Instruments |
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TPD4E001DCKR 데이터시트(HTML) 3 Page - Texas Instruments |
3 / 19 page TPD4E001 www.ti.com SLLS682F – JULY 2006 – REVISED MAY 2011 Electrical Characteristics VCC = 5 V ± 10%, TA = -40°C to 85°C (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP(1) MAX UNIT VCC Supply voltage 0.9 5.5 V ICC Supply current 1 100 nA VF Diode forward voltage IF = 10 mA 0.65 0.95 V VBR Breakdown Voltage IBR = 10mA 11 V Positive transients VCC + 25 TA = 25°C, ±15-kV HBM, IF = 10 A Negative transients –25 TA = 25°C, Positive transients VCC + 60 ±8-kV Contact Discharge VC Channel clamp voltage(2) V Negative transients –60 (IEC 61000-4-2), IF = 24 A TA = 25°C, Positive transients VCC + 100 ±15-kV Air-Gap Discharge Negative transients –100 (IEC 61000-4-2), IF = 45 A Ii/o Channel leakage current Vi/o = GND to VCC ±1 nA Ci/o Channel input capacitance VCC = 5 V, Bias of VCC/2 1.5 pF (1) Typical values are at VCC = 5 V and TA = 25°C. (2) Channel clamp voltage is not production tested ESD Protection PARAMETER TYP UNIT HBM ±15 kV IEC 61000-4-2 Contact Discharge ±8 kV IEC 61000-4-2 Air-Gap Discharge ±15 kV Peak Pulse Current, IPK (Tp = 8/20 µs) 5.5 Amps Peak Pulse Power, PPK (Tp = 8/20 µs) 100 Watts Copyright © 2006–2011, Texas Instruments Incorporated 3 |
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