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2SC1654_0712 데이터시트(PDF) 2 Page - Galaxy Semi-Conductor Holdings Limited |
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2SC1654_0712 데이터시트(HTML) 2 Page - Galaxy Semi-Conductor Holdings Limited |
2 / 4 page BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor 2SC1654 Document number: BL/SSSTC096 www.galaxycn.com Rev.A 2 Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=100μA,IE=0 180 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 160 V Emitter-base breakdown voltage V(BR)EBO IE=100μA,IC=0 5 V Collector cut-off current ICBO VCB=130V,IE=0 0.1 μA Emitter cut-off current IEBO VEB=5V,IC=0 0.1 μA DC current gain hFE VCE=3V,IC=15mA VCE=3V,IC=5mA 90 70 200 180 400 Collector-emitter saturation voltage VCE(sat) IC=50mA, IB=5mA 0.1 0.3 V Base-emitter saturation voltage VBE(sat) IC=50mA, IB=5mA 0.73 1 V Transition frequency fT VCE=10V, IC= 10mA 120 MHz Output capacitance Cob VCB=10V, IE=0,f=1kHz 2.3 pF CLASSIFICATION OF hFE(1) Range 90-180 135-270 200-400 Marking N5 N6 N7 |
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