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BY16 데이터시트(PDF) 1 Page - Diotec Semiconductor |
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BY16 데이터시트(HTML) 1 Page - Diotec Semiconductor |
1 / 2 page BY4 ... BY16 BY4 ... BY16 High Voltage Silicon Rectifier Diodes Silizium-Hochspannungs-Gleichrichterdioden Version 2011-10-14 Dimensions - Maße [mm] Nominal current Nennstrom 1 A ... 0.3 A Repetitive peak reverse voltage Periodische Spitzensperrspannung 4000...16000 V Plastic case Kunststoffgehäuse Ø 6.3 x 21 [mm] Weight approx. Gewicht ca. 1.9 g Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging bulk Standard Lieferform ungegurtet Maximum ratings and Characteristics Grenz- und Kennwerte Type Typ Rep. peak reverse volt. Period. Spitzensperrspg. VRRM [V] Surge peak reverse volt. Stoßspitzensperrspg. VRSM [V] Max. forward current Dauergrenzstrom IFAV [A] 1) Forward volt. Durchlass-Spg. VF [V] 2) BY4 4000 4000 1.0 < 4.0 BY6 6000 6000 1.0 < 6.0 BY8 8000 8000 0.5 < 8.0 BY12 12000 12000 0.5 < 10.0 BY16 16000 16000 0.3 < 15.0 Leakage Current Sperrstrom Tj = 25°C Tj = 100°C VR = VRRM VR = VRRM < 1 µA < 25 µA Peak forward surge current, 50 Hz half sine-wave Stoßstrom für eine 50 Hz Sinus-Halbwelle TA = 25°C IFSM 100 A Rating for fusing, t < 10 ms Grenzlastintegral, t < 10 ms TA = 25°C i2t 50 A2s Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur Tj TS -50...+150°C -50...+150°C Thermal resistance junction to ambient air Wärmewiderstand Sperrschicht – umgebende Luft RthA < 25 K/W 1) 1 Valid, if leads are kept at ambient temperature TA = 50°C at a distance of 10 mm from case Gültig, wenn die Anschlussdrähte in 10 mm Abstand vom Gehäuse auf Umgebungstemperatur TA = 50°C gehalten werden 2 At / Bei IFAV,Tj = 25°C © Diotec Semiconductor AG http://www.diotec.com/ 1 6.3 Ø 1.2±0.05 |
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