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FM28V100 데이터시트(PDF) 8 Page - Ramtron International Corporation

부품명 FM28V100
상세설명  1Mbit Bytewide F-RAM Memory
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제조업체  RAMTRON [Ramtron International Corporation]
홈페이지  http://www.ramtron.com
Logo RAMTRON - Ramtron International Corporation

FM28V100 데이터시트(HTML) 8 Page - Ramtron International Corporation

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FM28V100 - 128Kx8 FRAM
Rev. 1.2
May 2010
Page 8 of 13
Read Cycle AC Parameters (TA = -40
° C to +85° C, CL = 30 pF, unless otherwise specified)
VDD 2.0 to 2.7V
VDD 2.7 to 3.6V
Symbol
Parameter
Min
Max
Min
Max
Units
Notes
tRC
Read Cycle Time
105
-
90
-
ns
tCE
Chip Enable Access Time
-
70
-
60
ns
tAA
Address Access Time
-
105
-
90
ns
tOH
Output Hold Time
20
-
20
-
ns
tAAP
Page Mode Address Access Time
-
40
-
30
ns
tOHP
Page Mode Output Hold Time
3
-
3
-
ns
tCA
Chip Enable Active Time
70
-
60
-
ns
tPC
Precharge Time
35
-
30
-
ns
tAS
Address Setup Time (to /CE1, CE2 active)
0
-
0
-
ns
tAH
Address Hold Time (/CE-controlled)
70
-
60
-
ns
tOE
Output Enable Access Time
-
25
-
15
ns
tHZ
Chip Enable to Output High-Z
-
10
-
10
ns
1
tOHZ
Output Enable High to Output High-Z
-
10
-
10
ns
1
Write Cycle AC Parameters (TA = -40
° C to +85° C, unless otherwise specified)
VDD 2.0 to 2.7V
VDD 2.7 to 3.6V
Symbol
Parameter
Min
Max
Min
Max
Units
Notes
tWC
Write Cycle Time
105
-
90
-
ns
tCA
Chip Enable Active Time
70
-
60
-
ns
tCW
Chip Enable to Write Enable High
70
-
60
-
ns
tPC
Precharge Time
35
-
30
-
ns
tPWC
Page Mode Write Enable Cycle Time
40
-
30
-
ns
tWP
Write Enable Pulse Width
22
-
18
-
ns
tAS
Address Setup Time (to /CE1, CE2 active)
0
-
0
-
ns
tAH
Address Hold Time (/CE-controlled)
70
-
60
-
ns
tASP
Page Mode Address Setup Time (to /WE low)
8
-
5
-
ns
tAHP
Page Mode Address Hold Time (to /WE low)
20
-
15
-
ns
tWLC
Write Enable Low to Chip Disabled
30
-
25
-
ns
tWLA
Write Enable Low to A(16:3) Change
30
-
25
-
ns
tAWH
A(16:3) Change to Write Enable High
105
-
90
-
ns
tDS
Data Input Setup Time
20
-
15
-
ns
tDH
Data Input Hold Time
0
-
0
-
ns
tWZ
Write Enable Low to Output High Z
-
10
-
10
ns
1
tWX
Write Enable High to Output Driven
5
-
5
-
ns
1
tWS
Write Enable to CE-Active Setup Time
0
-
0
-
ns
1,2
tWH
Write Enable to CE-Inactive Hold Time
0
-
0
-
ns
1,2
Notes
1
This parameter is characterized but not 100% tested.
2
The relationship between CE’s and /WE determines if a /CE- or /WE-controlled write occurs.
Power Cycle Timing (TA = -40
° C to +85° C, VDD = 2.0V to 3.6V unless otherwise specified)
Symbol
Parameter
Min
Max
Units
Notes
tVR
VDD Rise Time
50
-
µs/V
1
tVF
VDD Fall Time
100
-
µs/V
1
tPU
Power Up (VDD min) to First Access Time
250
-
µs
tPD
Last Access to Power Down (VDD min)
0
-
µs
Notes
1
Slope measured at any point on VDD waveform.


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