BAR64V-05W-V

Document Number 81836

Rev. 1.3, 29-Oct-10

Vishay Semiconductors

www.vishay.com

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18380

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RF PIN Diodes - Dual, Common Cathode in SOT-323

Description

Characterized by low reverse Capacitance the PIN

Diodes BAR64V-05W-V was designed for RF signal

switching and tuning. As a function of the forward

bias current the forward resistance (RF) can be

adjusted over a wide range. A long carrier life time

offers low signal distortion for signals over 10 MHz up

to 3 GHz. Typical applications for these PIN Diodes

are switches and attenuators in wireless, mobile and

TV-systems.

Features

• High

voltage

current

controlled

RF

resistor

• Small diode capacitance

• Low series inductance

• Low forward resistance

• Improved

performance

due

to

two

separate dice

• Compliant to RoHS Directive 2002/95/EC and in

accordance to WEEE 2002/96/EC

Applications

• For frequencies up to 3 GHz

• RF-signal tuning

• Signal attenuator and switches

• Mobile, wireless and TV-Applications

Mechanical Data

Case: SOT-323

Weight: approx. 5.7 mg

Packaging Codes/Options:

GS18/10K per 13" reel (8 mm tape), 10K/box

GS08/3K per 7" reel (8 mm tape), 15K/box

Parts Table

Absolute Maximum Ratings

Part

Ordering code

Marking

Remarks

BAR64V-05W-V

BAR64V-05W-V-GS18 or BAR64V-05W-V-GS08

DW5

Tape and reel

Parameter

Test condition

Symbol

Value

Unit

Reverse voltage

100

V

Forward current

100

mA

Junction temperature

150

°C

Storage temperature range

- 55 to + 150

°C