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FW344 데이터시트(PDF) 2 Page - Sanyo Semicon Device

부품명 FW344
상세설명  Motor Driver Applications
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제조업체  SANYO [Sanyo Semicon Device]
홈페이지  https://www.sanyo-av.com/us/
Logo SANYO - Sanyo Semicon Device

FW344 데이터시트(HTML) 2 Page - Sanyo Semicon Device

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FW344
No.7616-2/6
Continued from preceding page.
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Forward Transfer Admittance
yfs
VDS=10V, ID=3.5A
3.0
5.3
S
RDS(on)1
ID=3.5A, VGS=10V
64
84
m
Static Drain-to-Source On-State Resistance
RDS(on)2
ID=1.8A, VGS=4V
105
150
m
Input Capacitance
Ciss
VDS=10V, f=1MHz
180
pF
Output Capacitance
Coss
VDS=10V, f=1MHz
42
pF
Reverse Transfer Capacitance
Crss
VDS=10V, f=1MHz
25
pF
Turn-ON Delay Time
td(on)
See specified Test Circuit.
7
ns
Rise Time
tr
See specified Test Circuit.
15
ns
Turn-OFF Delay Time
td(off)
See specified Test Circuit.
19
ns
Fall Time
tf
See specified Test Circuit.
5
ns
Total Gate Charge
Qg
VDS=10V, VGS=10V, ID=3.5A
5.0
nC
Gate-to-Source Charge
Qgs
VDS=10V, VGS=10V, ID=3.5A
0.9
nC
Gate-to-Drain “Miller” Charge
Qgd
VDS=10V, VGS=10V, ID=3.5A
0.6
nC
Diode Forward Voltage
VSD
IS=3.5A, VGS=0
0.88
1.2
V
[P-channel]
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=--1mA, VGS=0
--30
V
Zero-Gate Voltage Drain Current
IDSS
VDS=--30V, VGS=0
--1
µA
Gate-to-Source Leakage Current
IGSS
VGS=±16V, VDS=0
±10
µA
Cutoff Voltage
VGS(off)
VDS=--10V, ID=--1mA
--1.2
--2.3
V
Forward Transfer Admittance
yfs
VDS=--10V, ID=--4A
3.5
5
S
RDS(on)1
ID=--4A, VGS=--10V
58
78
m
Static Drain-to-Source On-State Resistance
RDS(on)2
ID=--2A, VGS=--4V
105
147
m
Input Capacitance
Ciss
VDS=--10V, f=1MHz
510
pF
Output Capacitance
Coss
VDS=--10V, f=1MHz
115
pF
Reverse Transfer Capacitance
Crss
VDS=--10V, f=1MHz
78
pF
Turn-ON Delay Time
td(on)
See specified Test Circuit.
11
ns
Rise Time
tr
See specified Test Circuit.
55
ns
Turn-OFF Delay Time
td(off)
See specified Test Circuit.
35
ns
Fall Time
tf
See specified Test Circuit.
40
ns
Total Gate Charge
Qg
VDS=--10V, VGS=--10V, ID=--4A
11
nC
Gate-to-Source Charge
Qgs
VDS=--10V, VGS=--10V, ID=--4A
2.4
nC
Gate-to-Drain “Miller” Charge
Qgd
VDS=--10V, VGS=--10V, ID=--4A
1.7
nC
Diode Forward Voltage
VSD
IS=--4A, VGS=0
--0.9
--1.5
V
Electrical Connection
Switching Time Test Circuit
[N-channel]
[P-channel]
PW=10
µs
D.C.
≤1%
P.G
50
G
S
D
ID=3.5A
RL=4.3Ω
VDD=15V
VOUT
FW344
VIN
10V
0V
VIN
PW=10
µs
D.C.
≤1%
P.G
50
G
S
D
ID= --4A
RL=3.75Ω
VDD= --15V
VOUT
FW344
VIN
0V
--10V
VIN
876
5
123
4
(Top view)
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1


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