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FW344 데이터시트(PDF) 2 Page - Sanyo Semicon Device |
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FW344 데이터시트(HTML) 2 Page - Sanyo Semicon Device |
2 / 6 page FW344 No.7616-2/6 Continued from preceding page. Ratings Parameter Symbol Conditions min typ max Unit Forward Transfer Admittance yfs VDS=10V, ID=3.5A 3.0 5.3 S RDS(on)1 ID=3.5A, VGS=10V 64 84 m Ω Static Drain-to-Source On-State Resistance RDS(on)2 ID=1.8A, VGS=4V 105 150 m Ω Input Capacitance Ciss VDS=10V, f=1MHz 180 pF Output Capacitance Coss VDS=10V, f=1MHz 42 pF Reverse Transfer Capacitance Crss VDS=10V, f=1MHz 25 pF Turn-ON Delay Time td(on) See specified Test Circuit. 7 ns Rise Time tr See specified Test Circuit. 15 ns Turn-OFF Delay Time td(off) See specified Test Circuit. 19 ns Fall Time tf See specified Test Circuit. 5 ns Total Gate Charge Qg VDS=10V, VGS=10V, ID=3.5A 5.0 nC Gate-to-Source Charge Qgs VDS=10V, VGS=10V, ID=3.5A 0.9 nC Gate-to-Drain “Miller” Charge Qgd VDS=10V, VGS=10V, ID=3.5A 0.6 nC Diode Forward Voltage VSD IS=3.5A, VGS=0 0.88 1.2 V [P-channel] Drain-to-Source Breakdown Voltage V(BR)DSS ID=--1mA, VGS=0 --30 V Zero-Gate Voltage Drain Current IDSS VDS=--30V, VGS=0 --1 µA Gate-to-Source Leakage Current IGSS VGS=±16V, VDS=0 ±10 µA Cutoff Voltage VGS(off) VDS=--10V, ID=--1mA --1.2 --2.3 V Forward Transfer Admittance yfs VDS=--10V, ID=--4A 3.5 5 S RDS(on)1 ID=--4A, VGS=--10V 58 78 m Ω Static Drain-to-Source On-State Resistance RDS(on)2 ID=--2A, VGS=--4V 105 147 m Ω Input Capacitance Ciss VDS=--10V, f=1MHz 510 pF Output Capacitance Coss VDS=--10V, f=1MHz 115 pF Reverse Transfer Capacitance Crss VDS=--10V, f=1MHz 78 pF Turn-ON Delay Time td(on) See specified Test Circuit. 11 ns Rise Time tr See specified Test Circuit. 55 ns Turn-OFF Delay Time td(off) See specified Test Circuit. 35 ns Fall Time tf See specified Test Circuit. 40 ns Total Gate Charge Qg VDS=--10V, VGS=--10V, ID=--4A 11 nC Gate-to-Source Charge Qgs VDS=--10V, VGS=--10V, ID=--4A 2.4 nC Gate-to-Drain “Miller” Charge Qgd VDS=--10V, VGS=--10V, ID=--4A 1.7 nC Diode Forward Voltage VSD IS=--4A, VGS=0 --0.9 --1.5 V Electrical Connection Switching Time Test Circuit [N-channel] [P-channel] PW=10 µs D.C. ≤1% P.G 50 Ω G S D ID=3.5A RL=4.3Ω VDD=15V VOUT FW344 VIN 10V 0V VIN PW=10 µs D.C. ≤1% P.G 50 Ω G S D ID= --4A RL=3.75Ω VDD= --15V VOUT FW344 VIN 0V --10V VIN 876 5 123 4 (Top view) 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 |
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