전자부품 데이터시트 검색엔진 |
|
2SC3479 데이터시트(PDF) 2 Page - Inchange Semiconductor Company Limited |
|
2SC3479 데이터시트(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 2 page INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3479 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; RBE= ∞ 800 V V(BR)CBO Collector-Base Breakdown Voltage IC= 5mA; IE= 0 1500 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 200mA; IC= 0 7 V VCE(sat) Collector-Emitter Saturation Voltage IC= 2.5A; IB= 0.8A 8.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 2.5A; IB= 0.8A 1.5 V ICBO Collector Cutoff Current VCB= 800V; IE= 0 10 μA IEBO Emitter Cutoff Current VEB= 4V; IC= 0 40 130 mA hFE DC Current Gain IC= 0.5A; VCE= 5V 8 VECF C-E Diode Forward Voltage IF= 2.5A 2.0 V fT Current-Gain—Bandwidth Product IC= 0.5A; VCE= 10V 3 MHz tf Fall Time IC= 2A, IB1= 0.4A; IB2= -0.8A 0.3 μs isc Website:www.iscsemi.cn 2 |
유사한 부품 번호 - 2SC3479 |
|
유사한 설명 - 2SC3479 |
|
|
링크 URL |
개인정보취급방침 |
ALLDATASHEET.CO.KR |
ALLDATASHEET 가 귀하에 도움이 되셨나요? [ DONATE ] |
Alldatasheet는? | 광고문의 | 운영자에게 연락하기 | 개인정보취급방침 | 링크교환 | 제조사별 검색 All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |