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2SC3550 데이터시트(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SC3550 데이터시트(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 2 page INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3550 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 800 V V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 900 V V(BR)EBO Emitter-Base Breakdown voltage IE= 1mA; IC= 0 10 V VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 0.2A B 1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 1A; IB= 0.2A B 1.5 V ICBO Collector Cutoff Current VCB= 900V; IE=0 1.0 mA IEBO Emitter Cutoff Current VEB= 10V; IC=0 1.0 mA hFE DC Current Gain IC= 1A; VCE= 5V 10 Switching times ton Turn-on Time 1.0 μs tstg Storage Time 4.0 μs tf Fall Time IC= 1A, IB1= 0.4A; IB2= -0.8A; RL= 150Ω; PW= 20μs; Duty Cycle≤2% 0.8 μs isc Website:www.iscsemi.cn 2 |
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