전자부품 데이터시트 검색엔진 |
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BD312 데이터시트(PDF) 1 Page - Inchange Semiconductor Company Limited |
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BD312 데이터시트(HTML) 1 Page - Inchange Semiconductor Company Limited |
1 / 3 page Inchange Semiconductor Product Specification Silicon PNP Power Transistors BD312 DESCRIPTION ・With TO-3 package ・High DC current gain ・Excellent safe operating area ・Complement to type BD311 APPLICATIONS ・Designed for power amplifier applications PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -60 V VCEO Collector-emitter voltage Open base -60 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -10 A ICM Collector current(peak) -20 A IB Base current -4 A PT Total power dissipation TC=25℃ 115 W Tj Junction temperature -65~200 ℃ Tstg Storage temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal resistance from junction to case 1.52 ℃/W Fig.1 simplified outline (TO-3) and symbol |
유사한 부품 번호 - BD312 |
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유사한 설명 - BD312 |
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