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BDX37 데이터시트(PDF) 1 Page - Inchange Semiconductor Company Limited |
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1 / 3 page Inchange Semiconductor Product Specification Silicon NPN Power Transistors BDX37 DESCRIPTION ・ ・With TO-126 package ・High current (Max: 5A) APPLICATIONS ・High current switching in power applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 120 V VCEO Collector-emitter voltage Open base 75 V VEBO Emitter -base voltage Open collector 5 V IC Collector current (DC) 5 A ICM Collector current-Peak 10 A IBM Base current-Peak 2 A PT Total power dissipation Tmb≤75℃ 15 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT Rth j-a Thermal resistance from junction to ambient 100 K/W Rth j-mb Thermal resistance from junction to mounting base 5 K/W |
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