전자부품 데이터시트 검색엔진 |
|
GSOT05CL-V-G-08 데이터시트(PDF) 3 Page - Vishay Siliconix |
|
GSOT05CL-V-G-08 데이터시트(HTML) 3 Page - Vishay Siliconix |
3 / 6 page Document Number: 85182 For technical questions, contact: ESDprotection@vishay.com www.vishay.com Rev. 1.2, 01-Jul-10 3 GSOT05CL-V Two-Line ESD-Protection in SOT-23 Vishay Semiconductors BiSY-MODE (1-line bidirectional symmetrical protection mode) If a bipolar symmetrical protection device is needed the GSOT05CL-V can also be used as a single line protection device. Therefore pin 1 has to be connected to the signal- or data-line (L1) and pin 2 to ground (or vice versa). Pin 3 must not be connected. Positive and negative voltage transients will be clamped in the same way. The clamping current through the GSOT05CL-V passes one diode in forward direction and the other one in reverse direction. The clamping voltage (VC) is defined by the breakthrough voltage (VBR) level of one diode plus the forward voltage of the other diode plus the voltage drop at the series impedances (resistances and inductances) of the protection device. Due to the same clamping levels in positive and negative direction the GSOT05CL-V voltage clamping behaviour is bidirectional and symmetrical (BiSy). Note • Ratings at 25 °C, ambient temperature unless otherwise specified. BiAs mode (between pin 1 to 2 or pin 2 to 1; pin 3 not connected) TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) Fig. 1 - ESD Discharge Current Wave Form acc. IEC 61000-4-2 (330 W/150 pF) Fig. 2 - 8/20 µs Peak Pulse Current Wave Form acc. IEC 61000-4-5 L1 20361 Ground BiSy ELECTRICAL CHARACTERISTICS GSOT05CL-V PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT Protection paths Number of lines which can be protected Nchannel -- 1 lines Reverse working voltage at IR = 1 μA VRWM 6- - V Reverse current at VR = 6 V IR -- 1 μA Reverse breakdown voltage at IR = 1 mA VBR 6.5 7.5 - V Reverse clamping voltage at IPP = 1 A VC -8 10 V at IPP = IPPM = 13 A - 12.6 15 V Capacitance at VR = 0 V; f = 1 MHz CD -50 60 pF at VR = 2.5 V; f = 1 MHz - 37 - pF 0 % 20 % 40 % 60 % 80 % 100 % 120 % - 10 0 10 20 30 40 50 60 70 80 90 100 Time (ns) Rise time = 0.7 ns to 1 ns 53 % 27 % 20557 0 % 20 % 40 % 60 % 80 % 100 % 010 20 30 40 Time (µs) 20 µs to 50 % 8 µs to 100 % 20548 |
유사한 부품 번호 - GSOT05CL-V-G-08 |
|
유사한 설명 - GSOT05CL-V-G-08 |
|
|
링크 URL |
개인정보취급방침 |
ALLDATASHEET.CO.KR |
ALLDATASHEET 가 귀하에 도움이 되셨나요? [ DONATE ] |
Alldatasheet는? | 광고문의 | 운영자에게 연락하기 | 개인정보취급방침 | 링크교환 | 제조사별 검색 All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |