전자부품 데이터시트 검색엔진 |
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GSOT03C-GS08 데이터시트(PDF) 7 Page - Vishay Siliconix |
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GSOT03C-GS08 데이터시트(HTML) 7 Page - Vishay Siliconix |
7 / 12 page Document Number: 85824 For technical questions, contact: ESDprotection@vishay.com www.vishay.com Rev. 2.0, 22-Jul-10 7 GSOT03C to GSOT36C Two-Line ESD-Protection in SOT-23 Vishay Semiconductors Note • Ratings at 25 °C, ambient temperature unless otherwise specified. BiAs mode (between pin 1 to 3 or pin 2 to 3) Note • Ratings at 25 °C, ambient temperature unless otherwise specified. BiAs mode (between pin 1 to 3 or pin 2 to 3) Note • Ratings at 25 °C, ambient temperature unless otherwise specified. BiAs mode (between pin 1 to 3 or pin 2 to 3) BiSy-MODE (1-line bidirectional symmetrical protection mode) If a bipolar symmetrical protection device is needed the GSOTxxC can also be used as a single line protection device. Therefore pin 1 has to be connected to the signal- or data-line (L1) and pin 2 to ground (or vice versa). Pin 3 must not be connected. Positive and negative voltage transients will be clamped in the same way. The clamping current through the GSOTxxC passes one diode in forward direction and the other one in reverse direction. The clamping voltage (VC) is defined by the breakthrough voltage (VBR) level of one diode plus the forward voltage of the other diode plus the voltage drop at the series impedances (resistances and inductances) of the protection device. Due to the same clamping levels in positive and negative direction the GSOTxxC voltage clamping behaviour is bidirectional and symmetrical (BiSy). ELECTRICAL CHARACTERISTICS GSOT15C PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT Protection paths Number of lines which can be protected Nchannel -- 2 lines Reverse working voltage at IR = 1 μA VRWM 15 - - V Reverse current at VR = 15 V IR -- 1 μA Reverse breakdown voltage at IR = 1 mA VBR 16.5 18 - V Reverse clamping voltage at IPP = 1 A VC - 19.4 23.5 V at IPP = IPPM = 8 A - 24.8 28.8 V Forward clamping voltage at IPP = 1 A VF -1 1.2 V at IPP = IPPM = 8 A - 1.8 - V Capacitance at VR = 0 V; f = 1 MHz CD - 90 120 pF at VR = 7.5 V; f = 1 MHz - 35 - pF ELECTRICAL CHARACTERISTICS GSOT24C PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT Protection paths Number of lines which can be protected Nchannel -- 2 lines Reverse working voltage at IR = 1 μA VRWM 24 - - V Reverse current at VR = 24 V IR -- 1 μA Reverse breakdown voltage at IR = 1 mA VBR 27 30 - V Reverse clamping voltage at IPP = 1 A VC -34 41 V at IPP = IPPM = 5 A - 41 47 V Forward clamping voltage at IPP = 1 A VF -1 1.2 V at IPP = IPPM = 5 A - 1.4 - V Capacitance at VR = 0 V; f = 1 MHz CD -65 80 pF at VR = 12 V; f = 1 MHz - 20 - pF ELECTRICAL CHARACTERISTICS GSOT36C PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT Protection paths Number of lines which can be protected Nchannel -- 2 lines Reverse working voltage at IR = 1 μA VRWM 36 - - V Reverse current at VR = 36 V IR -- 1 μA Reverse breakdown voltage at IR = 1 mA VBR 39 43 - V Reverse clamping voltage at IPP = 1 A VC -49 60 V at IPP = IPPM = 3.5 A - 59 71 V Forward clamping voltage at IPP = 1 A VF -1 1.2 V at IPP = IPPM = 3.5 A - 1.3 - V Capacitance at VR = 0 V; f = 1 MHz CD -52 65 pF at VR = 18 V; f = 1 MHz - 12 - pF |
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유사한 설명 - GSOT03C-GS08 |
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