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GSOT03C-GS08 데이터시트(PDF) 7 Page - Vishay Siliconix

부품명 GSOT03C-GS08
상세설명  Two-Line ESD-Protection in SOT-23
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제조업체  VISHAY [Vishay Siliconix]
홈페이지  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

GSOT03C-GS08 데이터시트(HTML) 7 Page - Vishay Siliconix

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Document Number: 85824
For technical questions, contact: ESDprotection@vishay.com
www.vishay.com
Rev. 2.0, 22-Jul-10
7
GSOT03C to GSOT36C
Two-Line ESD-Protection in SOT-23 Vishay Semiconductors
Note
• Ratings at 25 °C, ambient temperature unless otherwise specified. BiAs mode (between pin 1 to 3 or pin 2 to 3)
Note
• Ratings at 25 °C, ambient temperature unless otherwise specified. BiAs mode (between pin 1 to 3 or pin 2 to 3)
Note
• Ratings at 25 °C, ambient temperature unless otherwise specified. BiAs mode (between pin 1 to 3 or pin 2 to 3)
BiSy-MODE (1-line bidirectional symmetrical protection mode)
If a bipolar symmetrical protection device is needed the GSOTxxC can also be used as a single line protection device. Therefore
pin 1 has to be connected to the signal- or data-line (L1) and pin 2 to ground (or vice versa). Pin 3 must not be connected.
Positive and negative voltage transients will be clamped in the same way. The clamping current through the GSOTxxC passes
one diode in forward direction and the other one in reverse direction. The clamping voltage (VC) is defined by the breakthrough
voltage (VBR) level of one diode plus the forward voltage of the other diode plus the voltage drop at the series impedances
(resistances and inductances) of the protection device.
Due to the same clamping levels in positive and negative direction the GSOTxxC voltage clamping behaviour is bidirectional
and symmetrical (BiSy).
ELECTRICAL CHARACTERISTICS GSOT15C
PARAMETER
TEST CONDITIONS/REMARKS
SYMBOL
MIN.
TYP.
MAX.
UNIT
Protection paths
Number of lines which can be protected
Nchannel
--
2
lines
Reverse working voltage
at IR = 1 μA
VRWM
15
-
-
V
Reverse current
at VR = 15 V
IR
--
1
μA
Reverse breakdown voltage
at IR = 1 mA
VBR
16.5
18
-
V
Reverse clamping voltage
at IPP = 1 A
VC
-
19.4
23.5
V
at IPP = IPPM = 8 A
-
24.8
28.8
V
Forward clamping voltage
at IPP = 1 A
VF
-1
1.2
V
at IPP = IPPM = 8 A
-
1.8
-
V
Capacitance
at VR = 0 V; f = 1 MHz
CD
-
90
120
pF
at VR = 7.5 V; f = 1 MHz
-
35
-
pF
ELECTRICAL CHARACTERISTICS GSOT24C
PARAMETER
TEST CONDITIONS/REMARKS
SYMBOL
MIN.
TYP.
MAX.
UNIT
Protection paths
Number of lines which can be protected
Nchannel
--
2
lines
Reverse working voltage
at IR = 1 μA
VRWM
24
-
-
V
Reverse current
at VR = 24 V
IR
--
1
μA
Reverse breakdown voltage
at IR = 1 mA
VBR
27
30
-
V
Reverse clamping voltage
at IPP = 1 A
VC
-34
41
V
at IPP = IPPM = 5 A
-
41
47
V
Forward clamping voltage
at IPP = 1 A
VF
-1
1.2
V
at IPP = IPPM = 5 A
-
1.4
-
V
Capacitance
at VR = 0 V; f = 1 MHz
CD
-65
80
pF
at VR = 12 V; f = 1 MHz
-
20
-
pF
ELECTRICAL CHARACTERISTICS GSOT36C
PARAMETER
TEST CONDITIONS/REMARKS
SYMBOL
MIN.
TYP.
MAX.
UNIT
Protection paths
Number of lines which can be protected
Nchannel
--
2
lines
Reverse working voltage
at IR = 1 μA
VRWM
36
-
-
V
Reverse current
at VR = 36 V
IR
--
1
μA
Reverse breakdown voltage
at IR = 1 mA
VBR
39
43
-
V
Reverse clamping voltage
at IPP = 1 A
VC
-49
60
V
at IPP = IPPM = 3.5 A
-
59
71
V
Forward clamping voltage
at IPP = 1 A
VF
-1
1.2
V
at IPP = IPPM = 3.5 A
-
1.3
-
V
Capacitance
at VR = 0 V; f = 1 MHz
CD
-52
65
pF
at VR = 18 V; f = 1 MHz
-
12
-
pF


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