GSOT03C-V-G-08 datasheet(9/12 Pages) VISHAY

부품명	GSOT03C-V-G-08

상세설명	Two-Line ESD-Protection in SOT-23

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제조업체	VISHAY [Vishay Siliconix]

홈페이지	http://www.vishay.com

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9 / 12 page

Document Number: 85824

For technical questions, contact: ESDprotection@vishay.com

www.vishay.com

Rev. 2.0, 22-Jul-10

9

GSOT03C to GSOT36C

Two-Line ESD-Protection in SOT-23 Vishay Semiconductors

Note

• Ratings at 25 °C, ambient temperature unless otherwise specified. BiAs mode (between pin 1 to 2 or pin 2 to 1; pin 3 not connected)

Note

• Ratings at 25 °C, ambient temperature unless otherwise specified. BiAs mode (between pin 1 to 2 or pin 2 to 1; pin 3 not connected)

Note

• Ratings at 25 °C, ambient temperature unless otherwise specified. BiAs mode (between pin 1 to 2 or pin 2 to 1; pin 3 not connected)

Note

• Ratings at 25 °C, ambient temperature unless otherwise specified. BiAs mode (between pin 1 to 2 or pin 2 to 1; pin 3 not connected)

ELECTRICAL CHARACTERISTICS GSOT08C

PARAMETER

TEST CONDITIONS/REMARKS

SYMBOL

MIN.

TYP.

MAX.

UNIT

Protection paths

Number of lines which can be protected

Nchannel

--

1

lines

Reverse working voltage

at IR = 5 μA

VRWM

8.5

-

V

Reverse current

at VR = 8.5 V

IR

--

5

μA

Reverse breakdown voltage

at IR = 1 mA

VBR

9.5

10.7

-

V

Reverse clamping voltage

at IPP = 1 A

VC

-

11.7

14

V

at IPP = IPPM = 18 A

-

18.5

22.2

V

Capacitance

at VR = 0 V; f = 1 MHz

CD

-

80

125

pF

at VR = 4 V; f = 1 MHz

-

60

-

pF

ELECTRICAL CHARACTERISTICS GSOT12C

PARAMETER

TEST CONDITIONS/REMARKS

SYMBOL

MIN.

TYP.

MAX.

UNIT

Protection paths

Number of lines which can be protected

Nchannel

--

1

lines

Reverse working voltage

at IR = 1 μA

VRWM

12.5

-

V

Reverse current

at VR = 12.5 V

IR

--

1

μA

Reverse breakdown voltage

at IR = 1 mA

VBR

13.5

15.7

-

V

Reverse clamping voltage

at IPP = 1 A

VC

-

16.4

19.7

V

at IPP = IPPM = 12 A

-

23.4

28.1

V

Capacitance

at VR = 0 V; f = 1 MHz

CD

-58

75

pF

at VR = 7.5 V; f = 1 MHz

-

36

-

pF

ELECTRICAL CHARACTERISTICS GSOT15C

PARAMETER

TEST CONDITIONS/REMARKS

SYMBOL

MIN.

TYP.

MAX.

UNIT

Protection paths

Number of lines which can be protected

Nchannel

--

1

lines

Reverse working voltage

at IR = 1 μA

VRWM

15.5

-

V

Reverse current

at VR = 15.5 V

IR

--

1

μA

Reverse breakdown voltage

at IR = 1 mA

VBR

17

18.7

-

V

Reverse clamping voltage

at IPP = 1 A

VC

-

20.4

24.5

V

at IPP = IPPM = 8 A

-

26.6

30.6

V

Capacitance

at VR = 0 V; f = 1 MHz

CD

-45

60

pF

at VR = 7.5 V; f = 1 MHz

-

25

-

pF

ELECTRICAL CHARACTERISTICS GSOT24C

PARAMETER

TEST CONDITIONS/REMARKS

SYMBOL

MIN.

TYP.

MAX.

UNIT

Protection paths

Number of lines which can be protected

Nchannel

--

1

lines

Reverse working voltage

at IR = 1 μA

VRWM

24.5

-

V

Reverse current

at VR = 24.5 V

IR

--

1

μA

Reverse breakdown voltage

at IR = 1 mA

VBR

27.5

30.7

-

V

Reverse clamping voltage

at IPP = 1 A

VC

-34

41

V

at IPP = IPPM = 5 A

-

40

48

V

Capacitance

at VR = 0 V; f = 1 MHz

CD

-33

40

pF

at VR = 12 V; f = 1 MHz

-

18

-

pF

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	GSOT03C-HT3	244Kb / 13P	Two-Line ESD-Protection in LLP75 Rev. 1.7, 21-Apr-08
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Vishay Siliconix	VCAN26A2-03G	120Kb / 5P	Bidirectional Symmetrical (BiSy) Low Capacitance, Dual-Line ESD Protection Diode in SOT-23 01-Jan-2022

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GSOT03C-V-G-08 데이터시트(PDF) 9 Page - Vishay Siliconix

GSOT03C-V-G-08 데이터시트(HTML) 9 Page - Vishay Siliconix

유사한 부품 번호 - GSOT03C-V-G-08

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