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BU2727DF 데이터시트(PDF) 2 Page - Inchange Semiconductor Company Limited |
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BU2727DF 데이터시트(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 3 page Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors BU2727DF CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ;IB=0,L=25mH 825 V V(BR)EBO Emitter-base breakdown voltage IE=600mA ;IC=0 7.5 13.5 V VCEsat Collector-emitter saturation voltage IC=5A ;IB=0.91A 1.0 V VBEsat Base-emitter saturation voltage IC=5A;IB=0.91A 1.0 V ICES Collector cut-off current VCE=BVCES; VBE=0 Tj=125℃ 1.0 2.0 mA IEBO Emitter cut-off current VEB=7.5V; IC=0 110 mA hFE-1 DC current gain IC=0.1A ; VCE=5V 6 hFE-2 DC current gain IC=5A ; VCE=1V 5.5 11 VF Diode forward voltage IF=7A 2.2 V |
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