GSOT15C-V-G-08 datasheet(8/12 Pages) VISHAY

부품명	GSOT15C-V-G-08

상세설명	Two-Line ESD-Protection in SOT-23

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제조업체	VISHAY [Vishay Siliconix]

홈페이지	http://www.vishay.com

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8 / 12 page

www.vishay.com

For technical questions, contact: ESDprotection@vishay.com

Document Number: 85824

8

Rev. 2.0, 22-Jul-10

GSOT03C to GSOT36C

Vishay Semiconductors Two-Line ESD-Protection in SOT-23

Note

• Ratings at 25 °C, ambient temperature unless otherwise specified. BiAs mode (between pin 1 to 2 or pin 2 to 1; pin 3 not connected)

Note

• Ratings at 25 °C, ambient temperature unless otherwise specified. BiAs mode (between pin 1 to 2 or pin 2 to 1; pin 3 not connected)

Note

• Ratings at 25 °C, ambient temperature unless otherwise specified. BiAs mode (between pin 1 to 2 or pin 2 to 1; pin 3 not connected)

L1

20361

Ground

BiSy

ELECTRICAL CHARACTERISTICS GSOT03C

PARAMETER

TEST CONDITIONS/REMARKS

SYMBOL

MIN.

TYP.

MAX.

UNIT

Protection paths

Number of lines which can be protected

Nchannel

--

1

lines

Reverse working voltage

at IR = 100 μA

VRWM

3.8

-

V

Reverse current

at VR = 3.8 V

IR

--

100

μA

Reverse breakdown voltage

at IR = 1 mA

VBR

4.5

5.3

-

V

Reverse clamping voltage

at IPP = 1 A

VC

-7

8.4

V

at IPP = IPPM = 30 A

-

14

16.8

V

Capacitance

at VR = 0 V; f = 1 MHz

CD

-

210

300

pF

at VR = 1.6 V; f = 1 MHz

-

190

-

pF

ELECTRICAL CHARACTERISTICS GSOT04C

PARAMETER

TEST CONDITIONS/REMARKS

SYMBOL

MIN.

TYP.

MAX.

UNIT

Protection paths

Number of lines which can be protected

Nchannel

--

1

lines

Reverse working voltage

at IR = 20 μA

VRWM

4.5

-

V

Reverse current

at VR = 4:5 V

IR

--

20

μA

Reverse breakdown voltage

at IR = 1 mA

VBR

5.5

6.8

-

V

Reverse clamping voltage

at IPP = 1 A

VC

-7.5

9

V

at IPP = IPPM = 30 A

-

15.7

18.8

V

Capacitance

at VR = 0 V; f = 1 MHz

CD

-

155

225

pF

at VR = 2 V; f = 1 MHz

-

135

-

pF

ELECTRICAL CHARACTERISTICS GSOT05C

PARAMETER

TEST CONDITIONS/REMARKS

SYMBOL

MIN.

TYP.

MAX.

UNIT

Protection paths

Number of lines which can be protected

Nchannel

--

1

lines

Reverse working voltage

at IR = 10 μA

VRWM

5.5

-

V

Reverse current

at VR = 5.5 V

IR

--

10

μA

Reverse breakdown voltage

at IR = 1 mA

VBR

6.5

7.5

-

V

Reverse clamping voltage

at IPP = 1 A

VC

-8.1

9.7

V

at IPP = IPPM = 18 A

-

17

20.4

V

Capacitance

at VR = 0 V; f = 1 MHz

CD

-

130

175

pF

at VR = 4 V; f = 1 MHz

-

100

-

pF

유사한 부품 번호 - GSOT15C-V-G-08

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Guangdong Youtai Semico...	GSOT15C-E3-08	382Kb / 13P	Two-line ESD protection device
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유사한 설명 - GSOT15C-V-G-08

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GSOT15C-V-G-08 데이터시트(PDF) 8 Page - Vishay Siliconix

GSOT15C-V-G-08 데이터시트(HTML) 8 Page - Vishay Siliconix

유사한 부품 번호 - GSOT15C-V-G-08

유사한 설명 - GSOT15C-V-G-08

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