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BUL510 데이터시트(Datasheet) 2 Page - Inchange Semiconductor Company Limited

부품명 BUL510
상세내용  Silicon NPN Power Transistors
PDF  3 Pages
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제조사  ISC [Inchange Semiconductor Company Limited]
홈페이지  http://www.iscsemi.cn
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Inchange Semiconductor
Product Specification
2
Silicon NPN Power Transistors
BUL510
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
VCEO(SUS)
Collector-emitter sustaining voltage
IC=100mA ; IB=0; L=25mH
450
V
V(BR)EBO
Emitter-base breakdwon voltage
IE=10mA ;IC=0
9
V
VCEsat-1
Collector-emitter saturation voltage
IC=3A; IB=0.6A
0.8
V
VCEsat-2
Collector-emitter saturation voltage
IC=4A ;IB=0.8A
1.0
V
VCEsat-3
Collector-emitter saturation voltage
IC=5A ;IB=1.25A
1.5
V
VBEsat-1
Base-emitter saturation voltage
IC=3A ;IB=0.6A
1.2
V
VBEsat-2
Base-emitter saturation voltage
IC=5A; IB=1.25A
1.5
V
ICES
Collector cut-off current
VCE=1000V; VBE=0
TC=125℃
100
500
μA
ICEO
Collector cut-off current
VCE=450V; IB=0
250
μA
hFE-1
DC current gain
IC=1A ; VCE=5V
15
45
hFE-2
DC current gain
IC=10mA ; VCE=5V
10
Switching times inductive load
ts
Storage time
3.4
μs
tf
Fall time
IC=4A ;VCL=300V
IB1 =0.8A;IB2=-1.6A
L=200μH
0.15
μs




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