Document Number: 91016

www.vishay.com

S11-1044-Rev. C, 30-May-11

1

This document is subject to change without notice.

Power MOSFET

IRF510S, SiHF510S

Vishay Siliconix

FEATURES

• Halogen-free According to IEC 61249-2-21

Definition

• Surface Mount

• Available in Tape and Reel

• Dynamic dV/dt Rating

• Repetitive Avalanche Rated

• 175 °C Operating Temperature

•Fast Switching

• Ease of Paralleling

• Compliant to RoHS Directive 2002/95/EC

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized

device

design,

low

on-resistance

and

cost-effectiveness.

capable of accommodating die sizes up to HEX-4. It

provides the highest power capability and the lowest

possible on-resistance in any existing surface mount

applications

because

of

its low

internal

connection

resistance and can dissipate up to 2.0 W in a typical surface

mount application.

Note

a. See device orientation.

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

d. 1.6 mm from case.

e. When mounted on 1" square PCB (FR-4 or G-10 material).

PRODUCT SUMMARY

100

0.54

8.3

2.3

3.8

Configuration

Single

N-Channel MOSFET

G

D

S

G D

S

ORDERING INFORMATION

Package

Lead (Pb)-free and Halogen-free

SiHF510S-GE3

Lead (Pb)-free

IRF510SPbF

SiHF510S-E3

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

100

V

Gate-Source Voltage

± 20

Continuous Drain Current

5.6

A

4.0

20

Linear Derating Factor

0.29

W/°C

0.025

100

mJ

5.6

A

4.3

mJ

Maximum Power Dissipation

43

W

3.7

dV/dt

5.5

V/ns

Operating Junction and Storage Temperature Range

- 55 to + 175

°C

Soldering Recommendations (Peak Temperature)

for 10 s

* Pb containing terminations are not RoHS compliant, exemptions may apply