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Document Number: 91022

4

S11-1046-Rev. D, 30-May-11

This document is subject to change without notice.

IRF540S, SiHF540S

Vishay Siliconix

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage

Fig. 7 - Typical Source-Drain Diode Forward Voltage

Fig. 8 - Maximum Safe Operating Area

3000

2400

1800

1200

0

600

C

iss

C

rss

C

oss

V

C

C

C

91022_05

20

16

12

8

0

4

040

20

30

10

I

V

V

For test circuit

see figure 13

V

91022_06

70

60

50

0.4

1.6

1.2

0.8

25

150

V

91022_07

Operation in this area limited

by R

DS(on)

T

T

Single Pulse

0.1

2

5

2

5

1

2

5

10

25

1

25

10

25

25

91022_08