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IRLZ14L 데이터시트(PDF) 1 Page - Vishay Siliconix |
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IRLZ14L 데이터시트(HTML) 1 Page - Vishay Siliconix |
1 / 9 page Document Number: 90414 www.vishay.com S11-1044-Rev. C, 30-May-11 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Power MOSFET IRLZ14S, IRLZ14L, SiHLZ14S, SiHLZ14L Vishay Siliconix FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology • Surface Mount (IRLZ14S, SiHLZ14S) • Low-Profile Through-Hole (IRLZ14L, SiHLZ14L) • 175 °C Operating Temperature •Fast Switching • Compliant to RoHS Directive 2002/95/EC DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extermely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an extremely efficient reliable device for use in a wide variety of applications. The D2PAK is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and lowest possible on-resistance in any existing surface mount package. The D2PAK is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application. The through-hole version (IRLZ44L, SiHLZ44L) is available for low-profile applications. Note a. See device orientation. Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 25 V, starting TJ = 25 °C, L = 790 μH, Rg = 25 , IAS = 10 A (see fig. 12). c. ISD 10 A, dI/dt 90 A/μs, VDD VDS, TJ 175 °C. d. 1.6 mm from case. e. Uses IRLZ14, SiHLZ14 data and test conditions. PRODUCT SUMMARY VDS (V) 60 RDS(on) ()VGS = 5 V 0.20 Qg (Max.) (nC) 8.4 Qgs (nC) 3.5 Qgd (nC) 6.0 Configuration Single N-Channel MOSFET G D S D2PAK (TO-263) G D S I2PAK (TO-262) G D S ORDERING INFORMATION Package D2PAK (TO-263) D2PAK (TO-263) D2PAK (TO-263) I2PAK (TO-262) Lead (Pb)-free and Halogen-free SiHLZ14S-GE3 SiHLZ14STRL-GE3a SiHLZ14STRR-GE3a - Lead (Pb)-free IRLZ14SPbF - IRLZ14STRRPbFa IRLZ14LPbF SiHLZ14S-E3 - SiHLZ14STR-E3 SiHLZ14L-E3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltagee VDS 60 V Gate-Source Voltage VGS ± 10 Continuous Drain Current VGS at 5 V TC = 25 °C ID 10 A TC = 100 °C 7.2 Pulsed Drain Currenta, e IDM 40 Linear Derating Factor 0.29 W/°C Single Pulse Avalanche Energyb, e EAS 68 mJ Maximum Power Dissipation TC = 25 °C PD 43 W TA = 25 °C 3.7 Peak Diode Recovery dV/dtc, e dV/dt 4.5 V/ns Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 175 °C Soldering Recommendations (Peak Temperature) for 10 s 300d * Pb containing terminations are not RoHS compliant, exemptions may apply |
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