전자부품 데이터시트 검색엔진 |
|
SI1416EDH 데이터시트(PDF) 2 Page - Vishay Siliconix |
|
SI1416EDH 데이터시트(HTML) 2 Page - Vishay Siliconix |
2 / 12 page www.vishay.com 2 Document Number: 67580 S11-0611-Rev. A, 04-Apr-11 Vishay Siliconix Si1416EDH New Product This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 30 V VDS Temperature Coefficient ΔVDS/TJ ID = 250 µA 34 mV/°C VGS(th) Temperature Coefficient ΔVGS(th)/TJ - 3.3 Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 0.6 1.4 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 4.5 V ± 0.5 µA VDS = 0 V, VGS = ± 12 V ± 20 Zero Gate Voltage Drain Current IDSS VDS = 30 V, VGS = 0 V 1 VDS = 30 V, VGS = 0 V, TJ = 55 °C 10 On-State Drain Currenta ID(on) VDS ≥ 5 V, VGS = 10 V 10 A Drain-Source On-State Resistancea RDS(on) VGS = 10 V, ID = 3.1 A 0.047 0.058 Ω VGS = 4.5 V, ID = 2 A 0.052 0.064 VGS = 2.5 V, ID = 1 A 0.062 0.077 Forward Transconductancea gfs VDS = 15 V, ID = 3.1 A 13 S Dynamicb Total Gate Charge Qg VDS = 15 V, VGS = 10 V, ID = 4 A 7.5 12 nC VDS = 15 V, VGS = 4.5 V, ID = 4 A 3.5 5.5 Gate-Source Charge Qgs 1.8 Gate-Drain Charge Qgd 0.7 Gate Resistance Rg f = 1 MHz 0.6 3.3 6.6 Ω Turn-On Delay Time td(on) VDD = 15 V, RL = 4.7 Ω ID ≅ 3.2 A, VGEN = 4.5 V, Rg = 1 Ω 20 40 ns Rise Time tr 60 120 Turn-Off DelayTime td(off) 25 50 Fall Time tf 45 90 Turn-On Delay Time td(on) VDD = 15 V, RL = 4.7 Ω ID ≅ 3.2 A, VGEN = 10 V, Rg = 1 Ω 1.5 5 Rise Time tr 30 60 Turn-Off DelayTime td(off) 15 30 Fall Time tf 50 100 Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS TC = 25 °C 3.9 A Pulse Diode Forward Current ISM 15 Body Diode Voltage VSD IS = 3.2 A, VGS = 0 V 0.87 1.2 V Body Diode Reverse Recovery Time trr IF = 3.2 A, dI/dt = 100 A/µs, TJ = 25 °C 10 20 ns Body Diode Reverse Recovery Charge Qrr 410 nC Reverse Recovery Fall Time ta 5.3 ns Reverse Recovery Rise Time tb 4.6 |
유사한 부품 번호 - SI1416EDH |
|
유사한 설명 - SI1416EDH |
|
|
링크 URL |
개인정보취급방침 |
ALLDATASHEET.CO.KR |
ALLDATASHEET 가 귀하에 도움이 되셨나요? [ DONATE ] |
Alldatasheet는? | 광고문의 | 운영자에게 연락하기 | 개인정보취급방침 | 링크교환 | 제조사별 검색 All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |