전자부품 데이터시트 검색엔진 |
|
SI1416EDH 데이터시트(PDF) 4 Page - Vishay Siliconix |
|
SI1416EDH 데이터시트(HTML) 4 Page - Vishay Siliconix |
4 / 12 page www.vishay.com 4 Document Number: 67580 S11-0611-Rev. A, 04-Apr-11 Vishay Siliconix Si1416EDH New Product This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Gate Charge Source-Drain Diode Forward Voltage Threshold Voltage 0 2 4 6 8 10 0 2 4 6 8 Q g - Total Gate Charge (nC) V DS = 7.5 V I D = 4 A V DS = 15 V V DS = 24 V 0.1 1 10 100 0.0 0.2 0.4 0.6 0.8 1.0 1.2 V SD - Source-to-Drain Voltage (V) T J = 25 °C T J = 150 °C 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 - 50 - 25 0 25 50 75 100 125 150 T J -Temperature (°C) I D = 250 μA Normalized On-Resistance vs. Junction Temperature On-Resistance vs. Gate-to-Source Voltage Single Pulse Power, Junction-to-Ambient 0.6 0.8 1.0 1.2 1.4 1.6 1.8 - 50 - 25 0 25 50 75 100 125 150 T J - Junction Temperature (°C) V GS = 2.5 V, ID = 1 A V GS = 10 V, 4.5 V, ID = 3.2 A 0.000 0.020 0.040 0.060 0.080 0.100 0.120 0.140 0.160 02468 10 V GS - Gate-to-Source Voltage (V) T J = 125 °C T J = 25 °C I D = 3.2 A 0 2 4 6 8 10 0.001 0.01 0.1 1 10 100 1000 Time (s) |
유사한 부품 번호 - SI1416EDH |
|
유사한 설명 - SI1416EDH |
|
|
링크 URL |
개인정보취급방침 |
ALLDATASHEET.CO.KR |
ALLDATASHEET 가 귀하에 도움이 되셨나요? [ DONATE ] |
Alldatasheet는? | 광고문의 | 운영자에게 연락하기 | 개인정보취급방침 | 링크교환 | 제조사별 검색 All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |