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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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SI1443EDH 데이터시트(PDF) 2 Page - Vishay Siliconix |
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SI1443EDH 데이터시트(HTML) 2 Page - Vishay Siliconix |
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2 / 12 page  www.vishay.com 2 Document Number: 67849 S11-0869-Rev. A, 02-May-11 Vishay Siliconix Si1443EDH New Product This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Notes: a. Pulse test; pulse width 300 µs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = - 250 µA - 30 V VDS Temperature Coefficient VDS/TJ ID = - 250 µA - 22 mV/°C VGS(th) Temperature Coefficient VGS(th)/TJ 2.6 Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA - 0.6 - 1.5 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 12 V ± 20 µA VDS = 0 V, VGS = ± 4.5 V ± 1 Zero Gate Voltage Drain Current IDSS VDS = - 30 V, VGS = 0 V - 1 VDS = - 30 V, VGS = 0 V, TJ = 55 °C - 10 On-State Drain Currenta ID(on) VDS - 5 V, VGS = - 10 V - 15 A Drain-Source On-State Resistancea RDS(on) VGS = - 10 V, ID = - 4.3 A 0.043 0.054 VGS = - 4.5 V, ID = - 4 A 0.049 0.062 VGS = - 2.5 V, ID = - 3.5 A 0.067 0.085 Forward Transconductancea gfs VDS = - 15 V, ID = - 4.3 A 14 S Dynamicb Total Gate Charge Qg VDS = - 15 V, VGS = - 10 V, ID = - 4.3 A 18.5 28 nC Gate-Source Charge VDS = - 15 V, VGS = - 4.5 V, ID = - 4.3 A 8.6 13 Qgs 1.7 Gate-Drain Charge Qgd 2.5 Gate Resistance Rg f = 1 MHz 0.09 0.45 0.90 k Turn-On Delay Time td(on) VDD = - 15 V, RL = 4.4 ID - 3.4 A, VGEN = - 4.5 V, Rg = 1 125 188 ns Rise Time tr 220 330 Turn-Off Delay Time td(off) 1115 1673 Fall Time tf 435 653 Turn-On Delay Time td(on) VDD = - 15 V, RL = 4.4 ID - 3.4 A, VGEN = - 10 V, Rg = 1 40 60 Rise Time tr 64 98 Turn-Off Delay Time td(off) 1800 2700 Fall Time tf 420 630 Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS TC = 25 °C - 2.3 A Pulse Diode Forward Current ISM - 15 Body Diode Voltage VSD IS = - 3.4 A, VGS = 0 V - 0.85 - 1.2 V Body Diode Reverse Recovery Time trr IF = - 3.4 A, dI/dt = 100 A/µs, TJ = 25 °C 14 21 ns Body Diode Reverse Recovery Charge Qrr 714 nC Reverse Recovery Fall Time ta 9 ns Reverse Recovery Rise Time tb 5 |
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