전자부품 데이터시트 검색엔진 |
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SI3850ADV-T1-E3 데이터시트(PDF) 8 Page - Vishay Siliconix |
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SI3850ADV-T1-E3 데이터시트(HTML) 8 Page - Vishay Siliconix |
8 / 13 page www.vishay.com 8 Document Number: 73789 S09-2110-Rev. B, 12-Oct-09 Vishay Siliconix Si3850ADV P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?73789. Normalized Thermal Transient Impedance, Junction-to-Ambient 10-3 10-2 1 10 1000 10-1 10-4 100 0.2 0.1 0.05 0.02 Square Wave Pulse Duration (s) 1 0.1 0.01 Single Pulse t1 t2 Notes: PDM 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 100 °C/W 3. TJM - TA = PDMZthJA(t) t1 t2 4. Surface Mounted Duty Cycle = 0.5 |
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