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SI4116DY-T1-GE3 데이터시트(PDF) 3 Page - Vishay Siliconix |
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SI4116DY-T1-GE3 데이터시트(HTML) 3 Page - Vishay Siliconix |
3 / 10 page Document Number: 69837 S-83046-Rev. C, 22-Dec-08 www.vishay.com 3 Vishay Siliconix Si4116DY New Product TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Output Characteristics On-Resistance vs. Drain Current and Gate Voltage Gate Charge 0 10 20 30 40 50 0.0 0.5 1.0 1.5 2.0 2.5 VDS - Drain-to-Source Voltage (V) VGS =10thru 3 V VGS =2 V 0.0070 0.0073 0.0076 0.0079 0.0082 0.0085 0 10203040 50 ID - Drain Current (A) VGS =10 V VGS =4.5 V 0 2 4 6 8 10 0 8 16 24 32 40 ID =10A Qg - Total Gate Charge (nC) VDS =20 V VDS =10 V VDS =15 V Transfer Characteristics Capacitance On-Resistance vs. Junction Temperature 0.0 0.4 0.8 1.2 1.6 2.0 0.0 0.6 1.2 1.8 2.4 3.0 VGS - Gate-to-Source Voltage (V) TC = 25 °C TC = 125 °C TC = - 55 °C Crss 0 500 1000 1500 2000 2500 0 5 10 15 20 25 Coss Ciss VDS - Drain-to-Source Voltage (V) 0.6 0.9 1.2 1.5 1.8 - 50 - 25 0 25 50 75 100 125 150 TJ -Junction Temperature (°C) ID =10A VGS =10 V VGS =4.5 V |
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