SI4122DY-T1-GE3 datasheet(5/10 Pages) VISHAY

부품명	SI4122DY-T1-GE3

상세설명	N-Channel 40-V (D-S) MOSFET

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Document Number: 68665

S-81220-Rev. A, 02-Jun-08

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Si4122DY

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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper

dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package

limit.

Current Derating*

0

6

12

18

24

30

0

255075

100

125

150

TC - Case Temperature (°C)

Power Derating, Junction-to-Foot

0.0

1.5

3.0

4.5

6.0

7.5

0

25

50

75

100

125

150

TC - Case Temperature (°C)

Power, Junction-to-Ambient

0.0

0.4

0.8

1.2

1.6

2.0

0

25

50

75

100

125

150

TA -Ambient Temperature (°C)

유사한 부품 번호 - SI4122DY-T1-GE3

제조업체	부품명	데이터시트	상세설명
Vishay Siliconix	SI4122DY-T1-GE3	206Kb / 9P	N-Channel 40 V (D-S) MOSFET 01-Jan-2022

More results

유사한 설명 - SI4122DY-T1-GE3

제조업체	부품명	데이터시트	상세설명
Vishay Siliconix	SI2318DS	79Kb / 4P	N-Channel 40-V (D-S) MOSFET Rev. A, 18-Aug-03
	SIRA58DP	409Kb / 13P	N-Channel 40 V (D-S) MOSFET Rev. A, 08-Feb-16
	SUM90N04-3M3P	185Kb / 8P	N-Channel 40 V (D-S) MOSFET Rev. B, 02-Dec-13
Analog Power	AM2340N	326Kb / 5P	N-Channel 40-V (D-S) MOSFET
Analog Power	AM90N04-01P	315Kb / 5P	N-Channel 40-V (D-S) MOSFET
Vishay Siliconix	SI7156DP	108Kb / 7P	N-Channel 40-V (D-S) MOSFET Rev. B, 09-Feb-09
Vishay Siliconix	SISS10DN	330Kb / 9P	N-Channel 40 V (D-S) MOSFET Rev. A, 08-Feb-16
Analog Power	AM2344N	313Kb / 5P	N-Channel 40-V (D-S) MOSFET
Vishay Siliconix	SI2318CDS	236Kb / 10P	N-Channel 40 V (D-S) MOSFET Rev. A, 04-Oct-10
	SI4154DY	91Kb / 7P	N-Channel 40-V (D-S) MOSFET Rev. A, 01-Jun-09
	SI4446DY	265Kb / 9P	N-Channel 40-V (D-S) MOSFET Rev. B, 02-Mar-09

More results

SI4122DY-T1-GE3 데이터시트(PDF) 5 Page - Vishay Siliconix

SI4122DY-T1-GE3 데이터시트(HTML) 5 Page - Vishay Siliconix

유사한 부품 번호 - SI4122DY-T1-GE3

유사한 설명 - SI4122DY-T1-GE3

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