전자부품 데이터시트 검색엔진 |
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SI4470EY-T1-E3 데이터시트(PDF) 2 Page - Vishay Siliconix |
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SI4470EY-T1-E3 데이터시트(HTML) 2 Page - Vishay Siliconix |
2 / 8 page www.vishay.com 2 Document Number: 71606 S10-2137-Rev. D, 20-Sep-10 Vishay Siliconix Si4470EY Notes: a. Pulse test; pulse width 300 µs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 2.0 V Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 48 V, VGS = 0 V 1 µA VDS = 48 V, VGS = 0 V, TJ = 55 °C 5 On-State Drain Currenta ID(on) VDS 5 V, VGS = 10 V 50 A Drain-Source On-State Resistancea RDS(on) VGS = 10 V, ID = 12 A 0.009 0.011 VGS = 6.0 V, ID = 10 A 0.0105 0.013 Forward Transconductancea gfs VDS = 15 V, ID = 10 A 50 S Diode Forward Voltagea VSD IS = 3.0 A, VGS = 0 V 0.75 1.2 V Dynamicb Total Gate Charge Qg VDS = 30 V, VGS = 10 V, ID = 12 A 46 70 nC Gate-Source Charge Qgs 11.5 Gate-Drain Charge Qgd 11.5 Gate Resistance Rg 0.25 0.85 1.4 Turn-On Delay Time td(on) VDD = 30 V, RL = 30 ID 1.0 A, VGEN = 10 V, Rg = 6 16 25 ns Rise Time tr 12 18 Turn-Off Delay Time td(off) 50 75 Fall Time tf 30 45 Source-Drain Reverse Recovery Time trr IF = 3.0 A, dI/dt = 100 A/µs 40 60 Output Characteristics 0 10 20 30 40 50 0 2468 10 VGS = 10 V thru 5 V VDS - Drain-to-Source Voltage (V) 4 V 2 V, 3 V Transfer Characteristics 0 10 20 30 40 50 0 123 456 TC = 125 °C 25 °C VGS - Gate-to-Source Voltage (V) - 55 °C |
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