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SI4714DY 데이터시트(PDF) 2 Page - Vishay Siliconix

부품명 SI4714DY
상세설명  N-Channel 30 V (D-S) MOSFET with Schottky Diode
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Document Number: 67942
S11-1180-Rev. A, 13-Jun-11
Vishay Siliconix
Si4714DY
New Product
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes:
a. Pulse test; pulse width
 300 µs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0, ID = 1 mA
30
V
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID= 1 mA
12.3
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = 30 V, VGS = 0 V
0.017
0.150
mA
VDS = 30 V, VGS = 0 V, TJ = 100 °C
110
On -State Drain Currenta
ID(on)
VDS  5 V, VGS = 10 V
30
A
Drain-Source On-State Resistancea
RDS(on)
VGS = 10 V, ID = 15 A
0.0110
0.0135
VGS = 4.5 V, ID = 10 A
0.0145
0.0175
Forward Transconductancea
gfs
VDS = 15 V, ID = 15 A
25
S
Dynamicb
Input Capacitance
Ciss
VDS = 15 V, VGS = 0 V, f = 1 MHz
722
pF
Output Capacitance
Coss
194
Reverse Transfer Capacitance
Crss
64
Total Gate Charge
Qg
VDS = 15 V, VGS = 10 V, ID = 10 A
16.3
24.5
nC
VDS = 15 V, VGS = 4.5 V, ID = 10 A
7.3
11
Gate-Source Charge
Qgs
2.2
Gate-Drain Charge
Qgd
2
Gate Resistance
Rg
f = 1 MHz
0.3
1.1
2.2
Turn-On Delay Time
td(on)
VDD = 15 V, RL = 1.5 
ID  10 A, VGEN = 4.5 V, Rg = 1 
918
ns
Rise Time
tr
18
35
Turn-Off Delay Time
td(off)
10
20
Fall Time
tf
10
20
Turn-On Delay Time
td(on)
VDD = 15 V, RL = 1.5 
ID  10 A, VGEN = 10 V, Rg = 1 
714
Rise Time
tr
11
22
Turn-Off Delay Time
td(off)
14
28
Fall Time
tf
918
Drain-Source Body Diode and Schottky Characteristics
Continuous Source-Drain Diode Current
IS
TC = 25 °C
3.8
A
Pulse Diode Forward Currenta
ISM
50
Body Diode Voltage
VSD
IS = 1 A
0.42
0.53
V
Body Diode Reverse Recovery Time
trr
IF = 5 A, dI/dt = 100 A/µs, TJ = 25 °C
14.5
29
ns
Body Diode Reverse Recovery Charge
Qrr
510
nC
Reverse Recovery Fall Time
ta
7.5
ns
Reverse Recovery Rise Time
tb
7


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