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SI4714DY-T1-GE3 데이터시트(PDF) 4 Page - Vishay Siliconix |
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SI4714DY-T1-GE3 데이터시트(HTML) 4 Page - Vishay Siliconix |
4 / 10 page www.vishay.com 4 Document Number: 67942 S11-1180-Rev. A, 13-Jun-11 Vishay Siliconix Si4714DY New Product This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Source-Drain Diode Forward Voltage Reverse Current (Schottky) 0.001 0.01 0.1 1 10 100 0.0 0.2 0.4 0.6 0.8 1.0 V SD - Source-to-Drain Voltage (V) T J = 150 °C T J = 25 °C 10 -1 10 -2 10 -3 10 -4 10 -5 10 -6 10 -7 0 255075 100 125 150 T J -Temperature (°C) 20 V 10 V 30 V On-Resistance vs. Gate-to-Source Voltage Single Pulse Power, Junction-to-Ambient 0 0.02 0.04 0.06 0.08 0.10 02468 10 V GS - Gate-to-Source Voltage (V) T J = 125 °C T J = 25 °C I D = 15 A 0 16 32 48 64 80 0.001 0.01 0.1 1 10 Time (s) Safe Operating Area 0.01 0.1 1 10 100 0.01 0.1 1 10 100 V DS - Drain-to-Source Voltage (V) * V GS > minimum VGS at which RDS(on) is specified 100 μs 100 ms Limited by R DS(on)* 1 ms I DM Limited T C = 25 °C Single Pulse BVDSS Limited 10 ms 10 s 1 s DC I D Limited |
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