전자부품 데이터시트 검색엔진 |
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SI5904DC 데이터시트(PDF) 1 Page - Vishay Siliconix |
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SI5904DC 데이터시트(HTML) 1 Page - Vishay Siliconix |
1 / 9 page Vishay Siliconix Si5904DC Document Number: 71065 S10-0548-Rev. D, 08-Mar-10 www.vishay.com 1 Dual N-Channel 2.5 V (G-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET: 2.5 V Rated • Compliant to RoHS Directive 2002/95/EC PRODUCT SUMMARY VDS (V) RDS(on) (Ω)ID (A) 20 0.075 at VGS = 4.5 V ± 4.2 0.134 at VGS = 2.5 V ± 3.1 Ordering Information: Si5904DC-T1-E3 (Lead (Pb)-free) Si5904DC-T1-GE3 (Lead (Pb)-free and Halogen-free) 1206-8 ChipFE S1 G1 S2 G2 D1 D1 D2 D2 1 Bottom View Marking Code CB XX Lot Traceability and Date Code Part # Code T® N-Channel MOSFET G1 D1 S1 N-Channel MOSFET G2 D2 S2 Notes: a. Surface mounted on 1" x 1" FR4 board. b. See reliability manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. c. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 5 s Steady State Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ± 12 Continuous Drain Current (TJ = 150 °C) a TA = 25 °C ID ± 4.2 ± 3.1 A TA = 85 °C ± 3.0 ± 2.2 Pulsed Drain Current IDM ± 10 Continuous Source Current (Diode Conduction)a IS 1.8 0.9 Maximum Power Dissipationa TA = 25 °C PD 2.1 1.1 W TA = 85 °C 1.1 0.6 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C Soldering Recommendations (Peak Temperature)b, c 260 THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambienta t ≤ 5 s RthJA 50 60 °C/W Steady State 90 110 Maximum Junction-to-Foot (Drain) Steady State RthJF 30 40 |
유사한 부품 번호 - SI5904DC_10 |
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유사한 설명 - SI5904DC_10 |
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