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SI5902BDC-T1-GE3 데이터시트(PDF) 1 Page - Vishay Siliconix |
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SI5902BDC-T1-GE3 데이터시트(HTML) 1 Page - Vishay Siliconix |
1 / 7 page Vishay Siliconix Si5902BDC Document Number: 70415 S10-0548-Rev. B, 08-Mar-10 www.vishay.com 1 Dual N-Channel 30 V (D-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switch for Portable Applications • DC/DC Converter PRODUCT SUMMARY VDS (V) RDS(on) (Ω)ID (A) Qg (Typ.) 30 0.065 at VGS = 10 V 4a 2 nC 0.100 at VGS = 4.5 V 4a Marking Code XXX Lot Traceability and Date Code Part # Code CE 1206-8 ChipFET® (Dual) Bottom View S1 G1 S2 G2 D1 D1 D2 D2 1 Ordering Information: Si5902BDC-T1-E3 (Lead (Pb)-free) Si5902BDC-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET G1 D1 S1 N-Channel MOSFET G2 D2 S2 Notes: a. Package limited. b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. d. See Solder Profile ( www.vishay.com/ppg?73257). The 1206-8 ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 120 °C/W. ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID 4a A TC = 85 °C 3.8a TA = 25 °C 3.7b, c TA = 85 °C 2.6b, c Pulsed Drain Current IDM 10 Continuous Source-Drain Diode Current TC = 25 °C IS 2.6 TA = 25 °C 1.3b, c Maximum Power Dissipation TC = 25 °C PD 3.12 W TC = 85 °C 2.0 TA = 25 °C 1.5b, c TA = 85 °C 0.8b, c Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C Soldering Recommendations (Peak Temperature)d, e 260 THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambientb, f t ≤ 5 s RthJA 70 85 °C/W Maximum Junction-to-Foot (Drain) Steady State RthJF 33 40 |
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