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SI7102DN-T1-E3 데이터시트(PDF) 4 Page - Vishay Siliconix |
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SI7102DN-T1-E3 데이터시트(HTML) 4 Page - Vishay Siliconix |
4 / 14 page www.vishay.com 4 Document Number: 74250 S-83044-Rev. B, 22-Dec-08 Vishay Siliconix Si7102DN TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Output Characteristics On-Resistance vs. Drain Current and Gate Voltage Gate Charge 0 10 20 30 40 50 60 0.0 0.5 1.0 1.5 2.0 2.5 VDS - Drain-to-Source Voltage (V) V = 5 thru 1.5 V 1 V GS 0.0030 0.0032 0.0034 0.0036 0.0038 0.0040 ID - Drain Current (A) 0 10 20 30 40 50 60 VGS = 4.5 V VGS = 2.5 V 0.0 1.6 3.2 4.8 6.4 8.0 0 1530456075 ID = 10 A Qg - Total Gate Charge (nC) VDS = 8 V VDS = 4 V VDS = 6 V Transfer Characteristics Capacitance On-Resistance vs. Junction Temperature 0.0 0.4 0.8 1.2 1.6 2.0 0.0 0.3 0.6 0.9 1.2 1.5 TC = 25 °C TC = 125 °C TC = - 55 °C VGS - Gate-to-Source Voltage (V) Crss 0 1000 2000 3000 4000 5000 0.0 1.6 3.2 4.8 6.4 8.0 Coss Ciss VDS - Drain-to-Source Voltage (V) 0.7 0.9 1.1 1.3 1.5 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) VGS = 4.5 V VGS = 2.5 V ID = 15 A |
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