전자부품 데이터시트 검색엔진 |
|
SI7434DP 데이터시트(PDF) 2 Page - Vishay Siliconix |
|
SI7434DP 데이터시트(HTML) 2 Page - Vishay Siliconix |
2 / 4 page Vishay Siliconix SPICE Device Model Si7434DP SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Simulated Data Measured Data Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 1.6 V On-State Drain Current a ID(on) VDS ≥ 5 V, VGS = 10 V 38 A VGS = 10 V, ID = 3.8 A 0.131 0.129 Drain-Source On-State Resistance a rDS(on) VGS = 6 V, ID = 3.7 A 0.133 0.131 Ω Forward Transconductance a gfs VDS = 15 V, ID = 3.8 A 7 14 S Forward Voltage a VSD IS = 2.8 A, VGS = 0 V 0.82 0.75 V Dynamic b Total Gate Charge Qg 35.5 34 Gate-Source Charge Qgs 6.8 6.8 Gate-Drain Charge Qgd VDS = 100 V, VGS = 10 V, ID = 3.8 A 10.5 10.5 nC Turn-On Delay Time td(on) 11 16 Rise Time tr 19 23 Turn-Off Delay Time td(off) 30 47 Fall Time tf VDD = 100 V, RL = 25 Ω ID ≅ 4 A, VGEN = 10 V, RG = 6 Ω 43 19 ns Notes a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%. b. Guaranteed by design, not subject to production testing. 2 www.vishay.com Document Number: 72666 S-60147 Rev. B, 13-Feb-06 |
유사한 부품 번호 - SI7434DP_06 |
|
유사한 설명 - SI7434DP_06 |
|
|
링크 URL |
개인정보취급방침 |
ALLDATASHEET.CO.KR |
ALLDATASHEET 가 귀하에 도움이 되셨나요? [ DONATE ] |
Alldatasheet는? | 광고문의 | 운영자에게 연락하기 | 개인정보취급방침 | 링크교환 | 제조사별 검색 All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |