SI7540DP_09 datasheet(2/15 Pages) VISHAY

부품명	SI7540DP

상세설명	N- and P-Channel 12-V (D-S) MOSFET

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Document Number: 71911

S09-0227-Rev. F, 09-Feb-09

Vishay Siliconix

Si7540DP

Notes:

a. Pulse test; pulse width

≤ 300 µs, duty cycle ≤ 2 %.

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter

Symbol

Test Condition

Min.

Typ.

Max.

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 µA

N-Ch

0.6

1.5

V

VDS = VGS, ID = - 250 µA

P-Ch

- 0.6

- 1.5

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = ± 8 V

N-Ch

± 100

nA

P-Ch

± 100

Zero Gate Voltage Drain Current

IDSS

VDS = 12 V, VGS = 0 V

N-Ch

1

µA

VDS = - 12 V, VGS = 0 V

P-Ch

- 1

VDS = 12 V, VGS = 0 V, TJ = 55 °C

N-Ch

5

VDS = - 12 V, VGS = 0 V, TJ = 55 °C

P-Ch

- 5

On-State Drain Currenta

ID(on)

VDS ≥ 5 V, VGS = 4.5 V

N-Ch

20

A

VDS ≤ − 5 V, VGS = - 4.5 V

P-Ch

- 20

Drain-Source On-State Resistancea

RDS(on)

VGS = 4.5 V, ID = 11.8 A

N-Ch

0.014

0.017

Ω

VGS = - 4.5 V, ID = - 8.9 A

P-Ch

0.026

0.032

VGS = 2.5 V, ID = 9.8 A

N-Ch

0.020

0.025

VGS = - 2.5 V, ID = - 6.9 A

P-Ch

0.043

0.053

Forward Transconductancea

gfs

VDS = 5 V, ID = 11.8 A

N-Ch

32

S

VDS = - 5 V, ID = - 8.9 A

P-Ch

23

Diode Forward Voltagea

VSD

IS = 2.9 A, VGS = 0 V

N-Ch

0.77

1.2

V

IS = - 2.9 A, VGS = 0 V

P-Ch

- 0.8

- 1.2

Dynamicb

Total Gate Charge

Qg

N-Channel

VDS = 6 V, VGS = 4.5 V, ID = 11.8 A

P-Channel

VDS = - 6 V, VGS = - 4.5 V, ID = - 8.9 A

N-Ch

11.5

17

nC

P-Ch

13

20

Gate-Source Charge

Qgs

N-Ch

3.2

P-Ch

4.1

Gate-Drain Charge

Qgd

N-Ch

2.5

P-Ch

1.9

Gate Resistance

Rg

N-Ch

0.5

1.7

2.5

Ω

P-Ch

1.5

3.5

5.6

Turn-On Delay Time

td(on)

N-Channel

VDD = 6 V, RL = 6 Ω

ID ≅ 1 A, VGEN = 4.5 V, Rg = 6 Ω

P-Channel

VDD = - 6 V, RL = 6 Ω

ID ≅ - 1 A, VGEN = - 4.5 V, Rg = 6 Ω

N-Ch

30

45

ns

P-Ch

35

55

Rise Time

tr

N-Ch

50

75

P-Ch

42

65

Turn-Off Delay Time

td(off)

N-Ch

60

90

P-Ch

54

85

Fall Time

tf

N-Ch

25

40

P-Ch

17

30

Source-Drain Reverse Recovery

Time

trr

IF = 2.9 A, dI/dt = 100 A/µs

N-Ch

40

80

IF = - 2.9 A, dI/dt = 100 A/µs

P-Ch

40

80

유사한 부품 번호 - SI7540DP_09

제조업체	부품명	데이터시트	상세설명
Vishay Siliconix	SI7540DP	361Kb / 16P	N- and P-Channel 12-V (D-S) MOSFET Rev. F, 09-Feb-09
Vishay Siliconix	SI7540DP	366Kb / 15P	N- and P-Channel 12-V (D-S) MOSFET 01-Jan-2022

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Vishay Telefunken	SI7540DP	365Kb / 15P	N- and P-Channel 12-V (D-S) MOSFET
Vishay Siliconix	SI7540DP	361Kb / 16P	N- and P-Channel 12-V (D-S) MOSFET Rev. F, 09-Feb-09
	SIA511DJ	321Kb / 6P	N- and P-Channel 12-V (D-S) MOSFET Rev. A, 19-Nov-07
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Shenzhen Tuofeng Semico...	SIA517	3Mb / 10P	N- and P-Channel 12-V (D-S) MOSFET Feb,2018 V1.0
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SI7540DP 데이터시트(PDF) 2 Page - Vishay Siliconix

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