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SI7942DP 데이터시트(PDF) 2 Page - Vishay Siliconix |
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SI7942DP 데이터시트(HTML) 2 Page - Vishay Siliconix |
2 / 4 page Vishay Siliconix SPICE Device Model Si7942DP SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Simulated Data Measured Data Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 2.5 V On-State Drain Current a ID(on) VDS ≥ 5 V, VGS = 10 V 111 A VGS = 10 V, ID = 5.9 A 0.042 0.041 Drain-Source On-State Resistance a rDS(on) VGS = 6 V, ID = 5.5 A 0.048 0.048 Ω Forward Transconductance a gfs VDS = 15 V, ID = 5.9 A 12 14 S Forward Voltage a VSD IS = 2.9 A, VGS = 0 V 0.82 0.77 V Dynamic b Total Gate Charge Qg 17 16 Gate-Source Charge Qgs 3.8 3.8 Gate-Drain Charge Qgd VDS = 50 V, VGS = 10 V, ID = 5.9 A 5.5 5.5 nC Turn-On Delay Time td(on) 12 15 Rise Time tr 17 15 Turn-Off Delay Time td(off) 22 35 Fall Time tf VDD = 50 V, RL = 50 Ω ID ≅ 1 A, VGEN = 10 V, RG = 6 Ω 23 20 Source-Drain Reverse Recovery Time trr IF = 2.9 A, di/dt = 100 A/µs 40 50 ns Notes a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%. b. Guaranteed by design, not subject to production testing. 2 www.vishay.com Document Number: 72204 S-60261 Rev. B, 27-Feb-06 |
유사한 부품 번호 - SI7942DP_06 |
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유사한 설명 - SI7942DP_06 |
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