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SI7997DP 데이터시트(PDF) 4 Page - Vishay Siliconix |
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SI7997DP 데이터시트(HTML) 4 Page - Vishay Siliconix |
4 / 13 page www.vishay.com 4 Document Number: 66719 S10-1826-Rev. A, 09-Aug-10 Vishay Siliconix Si7997DP New Product TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Source-Drain Diode Forward Voltage Threshold Voltage 0.1 1 10 100 00.2 0.4 0.60.8 1.01.2 TJ = 25 °C TJ = 150 °C V SD - Source-to-Drain Voltage (V) 0.8 1.0 1.2 1.4 1.6 1.8 2.0 - 50 - 25 0 25 50 75 100 125 150 ID = 250 μA T J - Temperature (°C) On-Resistance vs. Gate-to-Source Voltage Single Pulse Power 0 0.005 0.010 0.015 0.020 0 2 468 10 TJ = 25 °C TJ = 125 °C V GS - Gate-to-Source Voltage (V) ID =20A 0 10 20 30 40 50 0.01 1 10 1000 0.1 Time (s) 100 Safe Operating Area 0.01 100 1 100 0.01 0.1 100 μs 10 s 10 ms 0.1 1 10 10 TA = 25 °C Single Pulse 1ms DC BVDSS Limited 1s 100 ms Limited by RDS(on)* V DS - Drain-to-Source Voltage (V) * V GS > minimum VGS at which RDS(on) is specified |
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