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SI8497DB 데이터시트(PDF) 1 Page - Vishay Siliconix |
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SI8497DB 데이터시트(HTML) 1 Page - Vishay Siliconix |
1 / 9 page Vishay Siliconix Si8497DB Document Number: 63355 S11-1385-Rev. A, 11-Jul-11 www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 P-Channel 30 V (D-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Ultra-small 1.5 mm x 1 mm Maximum Outline • Ultra-thin 0.59 Maximum Height • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Low On-Resistance Load Switch, Charger Switch, OVP Switch and Battery Switch for Portable Devices - Low Power Consumption - Increased Battery Life - Space Savings on PCB Notes: a. Surface mounted on 1" x 1" FR4 board. b. t = 10 s. c. Refer to IPC/JEDEC (J-STD-020), no manual or hand soldering. d. Based on TC = 25 °C. PRODUCT SUMMARY VDS (V) RDS(on) () Max. ID (A) d Qg (Typ.) - 30 0.053 at VGS = - 4.5 V - 13 16.3 nC 0.071 at VGS = - 2.5 V - 11 0.120 at VGS = - 2.0 V - 5 MICRO FOOT Device Marking: 8497 xxx = Date/Lot Traceability Code Ordering Information: Si8497DB-T2-E1 (Lead (Pb)-free and Halogen-free) DD SS SG 1 2 6 3 5 4 Bump Side View Backside View S G D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS - 30 V Gate-Source Voltage VGS ± 12 Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID - 13 A TC = 70 °C - 10 TA = 25 °C - 5.9a, b TA = 70 °C - 4.7a, b Pulsed Drain Current (t = 300 µs) IDM - 20 Continuous Source-Drain Diode Current TC = 25 °C IS - 11 TA = 25 °C - 2.3a, b Maximum Power Dissipation TC = 25 °C PD 13 W TC = 70 °C 8.4 TA = 25 °C 2.77a, b TA = 70 °C 1.77a, b Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C Package Reflow Conditionsc IR/Convection 260 |
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