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SIZ900DT-T1-GE3 데이터시트(PDF) 9 Page - Vishay Siliconix |
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SIZ900DT-T1-GE3 데이터시트(HTML) 9 Page - Vishay Siliconix |
9 / 14 page Document Number: 67344 S11-1652-Rev. B, 15-Aug-11 www.vishay.com 9 Vishay Siliconix SiZ900DT New Product This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Source-Drain Diode Forward Voltage Threshold Voltage 0.1 1 10 100 0.0 0.2 0.4 0.6 0.8 1.0 1.2 V SD - Source-to-Drain Voltage (V) T J = 150 °C T J = 25 °C 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 - 50 - 25 0 25 50 75 100 125 150 T J -Temperature (°C) I D = 250 μA On-Resistance vs. Gate-to-Source Voltage Single Pulse Power 0.000 0.002 0.004 0.006 0.008 0.010 02468 10 V GS - Gate-to-Source Voltage (V) T J = 125 °C T J = 25 °C I D = 20 A 0 20 40 60 80 100 0.001 0.01 0.1 1 10 100 1000 Time (s) Safe Operating Area, Junction-to-Ambient 0.01 0.1 1 10 100 1000 0.01 0.1 1 10 100 V DS - Drain-to-Source Voltage (V) * V GS > minimum VGS at which RDS(on) is specified 10 s 100 ms Limited by R DS(on)* 1 ms T Single Pulse A = 25 °C BVDSS Limited 10 ms 1 s DC |
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