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SIZ900DT-T1-GE3 데이터시트(PDF) 4 Page - Vishay Siliconix |
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SIZ900DT-T1-GE3 데이터시트(HTML) 4 Page - Vishay Siliconix |
4 / 14 page www.vishay.com 4 Document Number: 67344 S11-1652-Rev. B, 15-Aug-11 Vishay Siliconix SiZ900DT New Product This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Output Characteristics On-Resistance vs. Drain Current Gate Charge 0 20 40 60 80 100 0.0 0.5 1.0 1.5 2.0 2.5 3.0 V DS - Drain-to-Source Voltage (V) V GS = 10 V thru 4 V V GS = 3 V 0.004 0.005 0.006 0.007 0.008 0.009 0.010 0 20 40 60 80 I D - Drain Current (A) V GS = 4.5 V V GS = 10 V 0 2 4 6 8 10 0 6 12 18 24 30 Q g - Total Gate Charge (nC) V DS = 24 V V DS = 15 V V DS = 7.5 V I D = 18.8 A Transfer Characteristics Capacitance On-Resistance vs. Junction Temperature 0 4 8 12 16 20 0.0 0.5 1.0 1.5 2.0 2.5 3.0 V GS - Gate-to-Source Voltage (V) T C = - 55 °C T C = 25 °C T= 125 °C C 0 500 1000 1500 2000 2500 0 5 10 15 20 25 30 V DS - Drain-to-Source Voltage (V) C iss C oss C rss 0.6 0.8 1.0 1.2 1.4 1.6 1.8 - 50 - 25 0 25 50 75 100 125 150 T J - Junction Temperature (°C) I D = 19.4 A V GS = 10 V, 4.5 V |
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