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BBY52-03W 데이터시트(Datasheet) 2 Page - Siemens Semiconductor Group

부품명 BBY52-03W
상세내용  Silicon Tuning Diode (High Q hyperabrupt dual tuning diode Designed for low tuning voltage operation)
PDF  3 Pages
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제조사  SIEMENS [Siemens Semiconductor Group]
홈페이지  http://www.siemens.com/
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Semiconductor Group
2
Feb-04-1997
BBY 52-03W
Electrical Characteristics at
TA=25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC characteristics
Reverse current
VR = 6 V, TA = 25 °C
VR = 6 V, TA = 65 °C
IR
-
-
-
-
200
10
nA
AC characteristics
Diode capacitance
VR = 1 V, f = 1 MHz
VR = 2 V, f = 1 MHz
VR = 3 V, f = 1 MHz
VR = 4 V, f = 1 MHz
CT
0.85
-
-
1.4
1.15
1.35
1.5
1.85
1.45
-
-
2.2
pF
Capacitance ratio
VR = 1 V, VR = 4 V, f = 1 MHz
CT1/CT4
1.1
1.6
2.1
-
Series resistance
VR = 1 V, f = 1 GHz
rs
-
0.9
1.8
Case capacitance
f = 1 MHz
CC
-
0.12
-
pF
Series inductance chip to ground
Ls
-
1.8
-
nH




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