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SS8P5C 데이터시트(PDF) 1 Page - Vishay Siliconix

부품명 SS8P5C
상세설명  High Current Density Surface Mount Dual Common-Cathode Schottky Rectifier
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제조업체  VISHAY [Vishay Siliconix]
홈페이지  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SS8P5C 데이터시트(HTML) 1 Page - Vishay Siliconix

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Document Number: 89028
For technical questions within your region, please contact one of the following:
www.vishay.com
Revision: 17-May-11
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
High Current Density Surface Mount
Dual Common-Cathode Schottky Rectifier
SS8P5C, SS8P6C
Vishay General Semiconductor
New Product
TYPICAL APPLICATIONS
For use in high frequency rectifier of switching mode power
supplies, freewheeling diodes, DC/DC converters and
polarity protection application.
FEATURES
• Very low profile - typical height of 1.1 mm
• Ideal for automated placement
• Low forward voltage drop, low power losses
• High efficiency
• Low thermal resistance
• Meets
MSL
level
1,
per
J-STD-020,
LF maximum peak of 260 °C
• AEC-Q101 qualified
• Compliant
to
RoHS
Directive
2002/95/EC
and
in
accordance to WEEE 2002/96/EC
• Halogen-free according to IEC 61249-2-21 definition
MECHANICAL DATA
Case: TO-277A (SMPC)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS compliant, and
commercial grade
Base P/NHM3 - halogen-free, RoHS compliant, and
automotive grade
Terminals:
Matte
tin
plated
leads,
solderable
per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix
meets JESD 201 class 2 whisker test
PRIMARY CHARACTERISTICS
IF(AV)
2 x 4.0 A
VRRM
50 V, 60 V
IFSM
120 A
EAS
20 mJ
VF at IF = 4 A
0.56 V
TJ max.
150 °C
TO-277A (SMPC)
K
2
1
Anode 1
Anode 2
Cathode
K
eSMP® Series
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
SS8P5C
SS8P6C
UNIT
Device marking code
S85C
S86C
Maximum repetitive peak reverse voltage
VRRM
50
60
V
Maximum average forward rectified current
(fig. 1)
total device
IF(AV)
8.0
A
per diode
4.0
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
IFSM
120
A
Non-repetitive avalanche energy at 25 °C, IAS = 2 A per diode
EAS
20
mJ
Operating junction and storage temperature range
TJ, TSTG
- 55 to + 150
°C


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