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SS10PH45-M3-87A 데이터시트(PDF) 1 Page - Vishay Siliconix |
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SS10PH45-M3-87A 데이터시트(HTML) 1 Page - Vishay Siliconix |
1 / 5 page Document Number: 89057 For technical questions within your region, please contact one of the following: www.vishay.com Revision: 19-Apr-11 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 High Current Density Surface Mount Schottky Rectifier SS10PH45 Vishay General Semiconductor New Product TYPICAL APPLICATIONS For use in high frequency rectifier of switching mode power supplies, freewheeling diodes, DC/DC converters or polarity protection application. FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Guardring for overvoltage protection • High barrier technology, TJ = 175 °C maximum • Low leakage current • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21 definition MECHANICAL DATA Case: TO-277A (SMPC) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS compliant, and commercial grade Base P/NHM3 - halogen-free, RoHS compliant, and automotive grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix meets JESD 201 class 2 whisker test PRIMARY CHARACTERISTICS IF(AV) 10 A VRRM 45 V IFSM 200 A EAS 20 mJ VF at IF = 10 A 0.56 V IR 5.5 μA TJ max. 175 °C TO-277A (SMPC) Anode 1 Anode 2 Cathode K K 2 1 eSMP® Series MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL SS10PH45 UNIT Device marking code 10H45 Maximum repetitive peak reverse voltage VRRM 45 V Maximum average forward rectified current (fig. 1) IF(AV) 10 A Peak forward surge current 10 ms single half sine-wave superimposed on rated load IFSM 200 A Non-repetitive avalanche energy at IAS = 2 A , TJ = 25 °C EAS 20 mJ Operating junction and storage temperature range TJ, TSTG - 55 to + 175 °C |
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