전자부품 데이터시트 검색엔진 |
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TSHA6200 데이터시트(PDF) 2 Page - Vishay Siliconix |
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TSHA6200 데이터시트(HTML) 2 Page - Vishay Siliconix |
2 / 6 page www.vishay.com For technical questions, contact: emittertechsupport@vishay.com Document Number: 81021 2 Rev. 1.8, 25-Jun-09 TSHA6200, TSHA6201, TSHA6202, TSHA6203 Vishay Semiconductors Infrared Emitting Diode, 875 nm, GaAlAs Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature Note Tamb = 25 °C, unless otherwise specified 0 20 40 60 80 100 120 140 160 180 200 010 20 30 40 50 60 70 80 90 100 21142 T amb - Ambient Temperature (°C) R thJA = 230 K/W 0 20 40 60 80 100 120 0 10 203040 506070 80 90 100 T amb - Ambient Temperature (°C) 21143 R thJA = 230 K/W BASIC CHARACTERISTICS PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Forward voltage IF = 100 mA, tp = 20 ms VF 1.5 1.8 V Temperature coefficient of VF IF = 100 mA TKVF - 1.6 mV/K Reverse current VR = 5 V IR 100 µA Junction capacitance VR = 0 V, f = 1 MHz, E = 0 Cj 20 pF Temperature coefficient of φ e IF = 20 mA TK φ e - 0.7 %/K Angle of half intensity ϕ ± 12 deg Peak wavelength IF = 100 mA λ p 875 nm Spectral bandwidth IF = 100 mA Δλ 80 nm Temperature coefficient of λ p IF = 100 mA TK λ p 0.2 nm/K Rise time IF = 100 mA tr 600 ns IF = 1 A tr 300 ns Fall time IF = 100 mA tf 600 ns IF = 1 A tf 300 ns Virtual source diameter d 3.7 mm |
유사한 부품 번호 - TSHA6200_09 |
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유사한 설명 - TSHA6200_09 |
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