Document Number: 81020

www.vishay.com

Rev. 1.8, 08-Oct-09

1

Infrared Emitting Diode, 875 nm, GaAlAs

TSHA5500

Vishay Semiconductors

DESCRIPTION

The TSHA5500 is an infrared, 875 nm emitting diode in

GaAlAs on GaAlAs technology, molded in a clear, untinted

plastic package.

FEATURES

• Package type: leaded

• Package form: T-1¾

• Dimensions (in mm): Ø 5

• Leads with stand-off

• Peak wavelength:

λ

• High reliability

• Angle of half intensity:

ϕ = ± 24°

• Low forward voltage

• Suitable for high pulse current operation

• Good spectral matching with Si photodetectors

• Compliant

to

RoHS

directive

2002/95/EC

and

in

accordance to WEEE 2002/96/EC

• Halogen-free according to IEC 61249-2-21 definition

APPLICATIONS

• Infrared remote control and free air data transmission

systems with comfortable radiation angle

• This emitter is dedicated to systems with panes in

transmission

space

between

emitter

and

detector,

because of the low absorbtion of 875 nm radiation in glass

Note

Test conditions see table “Basic Characteristics”

Note

MOQ: minimum order quantity

Note

94 8390

PRODUCT SUMMARY

COMPONENT

ϕ (deg)

λ

TSHA5500

30

± 24

875

600

ORDERING INFORMATION

ORDERING CODE

PACKAGING

REMARKS

PACKAGE FORM

TSHA5500

Bulk

MOQ: 4000 pcs, 4000 pcs/bulk

T-1¾

ABSOLUTE MAXIMUM RATINGS

PARAMETER

TEST CONDITION

SYMBOL

VALUE

UNIT

Reverse voltage

5V

Forward current

100

mA

Peak forward current

200

mA

Surge forward current

2.5

A

Power dissipation

180

mW

Junction temperature

100

°C

Operating temperature range

- 40 to + 85

°C

Storage temperature range

- 40 to + 100

°C

Soldering temperature

t

≤ 5 s, 2 mm from case

260

°C

Thermal resistance junction/ambient

J-STD-051, leads 7 mm, soldered on PCB

230

K/W