전자부품 데이터시트 검색엔진 |
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BF1009S 데이터시트(PDF) 3 Page - Siemens Semiconductor Group |
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BF1009S 데이터시트(HTML) 3 Page - Siemens Semiconductor Group |
3 / 4 page BF 1009S Semiconductor Group 3 Au -25-1998 Total power dissipation Ptot = f (TS) 0 20 40 60 80 100 120 °C 150 TS 0 50 100 150 200 mW 300 Drain current ID = f (VG2S) 0.0 1.0 2.0 3.0 4.0 V 6.0 VG2S 0 1 2 3 4 5 6 7 8 9 10 11 12 mA 15 Forward transfer admittance | Y21 | = f (VG2S) 0.0 1.0 2.0 3.0 4.0 V 6.0 VG2S 0 2 4 6 8 10 12 14 16 18 20 22 24 mS 28 Insertion power gain | S21 | 2 = f (VG2S) 0.0 1.0 2.0 3.0 4.0 V 6.0 VG2S -60 -55 -50 -45 -40 -35 -30 -25 -20 -15 -10 -5 0 dB 10 Semiconductor Group 3 1998-11-01 |
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