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BFY193 데이터시트(Datasheet) 3 Page - Siemens Semiconductor Group

부품명 BFY193
상세내용  HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor For low noise, high gain broadband amplifiers up to 2 GHz.)
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제조사  SIEMENS [Siemens Semiconductor Group]
홈페이지  http://www.siemens.com/
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BFY 193
Semiconductor Group
3
Draft A03 1998-04-01
4)
Table 3
AC Characteristics at
T
A = 25 °C unless otherwise specified
Parameter
Symbol
Limit Values
Unit
min.
typ.
max.
Transition frequency
I
C = 40 mA, VCE = 5 V, f = 500 MHz
I
C = 50 mA, VCE = 8 V, f = 500 MHz
f
T
6.5
-
7.5
8
-
-
GHz
Collector-base capacitance
V
CB = 10 V, VBE = vbe = 0, f = 1 MHz
C
CB
-
0.56
0.75
pF
Collector-emitter capacitance
V
CE = 10 V, VBE = vbe = 0, f = 1 MHz
C
CE
-
0.34
-
pF
Emitter-base capacitance
V
EB = 0.5 V, VCB = vcb = 0, f = 1 MHz
C
EB
-
1.9
2.4
pF
Noise figure
I
C = 15 mA, VCE = 5 V, f = 2 GHz,
Z
S = ZSopt
F
-
2.3
2.9
dB
Power gain
I
C = 40 mA, VCE = 5 V, f = 2 GHz,
Z
S = ZSopt, ZL = ZLopt
G
ma
4)
12.5
13.5
-
dB
Transducer gain
I
C = 40 mA, VCE = 5 V, f = 2 GHz,
Z
S = ZL = 50 W
½S
21e½
2
89
-
dB
Output power
I
C = 50 mA, VCE = 5 V, f = 2 GHz,
P
IN = 10 dBm, ZS = ZL = 50 W
P
out
16.5
17.5
-
dBm
G
ma
S21
S12
----------- kk
2
1
Ð
Ð
() G
ms
,
S21
S12
-----------
==




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